期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：元件和材料
收藏年代2000～2024



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2000 2001 2002 2013 2015 2020
2021 2022 2023 2024

2000, vol.100, no.141 2000, vol.100, no.271 2000, vol.100, no.272 2000, vol.100, no.320 2000, vol.100, no.371 2000, vol.100, no.395
2000, vol.100, no.396 2000, vol.100, no.485 2000, vol.100, no.486

题名作者出版年年卷期
Measurement of semiconductor microstructures and analysis of semiconductor propertiesY. Takeda20002000, vol.100, no.371
Effect of hydrogen in the growth of GaN on SiC substrate by RF-MBEN. Teraguchi; A. Suzuki20002000, vol.100, no.371
Hexagonal GaN on GaAs(001) grown by MOVPE and its application to formation of GaN/Si structure by wafer bondingShuichiro Yamamoto; Mitsuru Funato; Shizuo Fujita; Shigeo Fujita20002000, vol.100, no.371
Characterization of GaN crystal quality by using sub-micrometer Schottky contacts - correlation between I-V characteristics and dislocationsKenji Shiojima; Tetsuya Suemitsu; Mitsumasa Ogura20002000, vol.100, no.371
Microscopic structure and cathodoluminescence property of polycrystalline GaN grown on ZnO/Si and silica glass substratesT. Araki; H. Kagatsume; Y. Nanishi20002000, vol.100, no.371
Fabrication of AlGaN/GaN HEMTs with buried p-layersKenji Shiojima; Tetsuya Suemitsu; Naoteru Shigekawa20002000, vol.100, no.371
Power performance of AlGaN/GaN HJFETs on thinned sapphire substratesN. Hayama; K. Kunihiro; Y. Okamoto; K. Kasahara; T. Nakayama; Y. Ohno; K. Matsunaga; H. Miyamoto; Y. Ando; M. Kuzuhara20002000, vol.100, no.371



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