期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：元件和材料
收藏年代2000～2024



全部

2000 2001 2002 2013 2015 2020
2021 2022 2023 2024

2000, vol.100, no.141 2000, vol.100, no.271 2000, vol.100, no.272 2000, vol.100, no.320 2000, vol.100, no.371 2000, vol.100, no.395
2000, vol.100, no.396 2000, vol.100, no.485 2000, vol.100, no.486

题名作者出版年年卷期
Low temperature epitaxial growth property of Si films by ECR plasma depositionYukio Yoshida; Yukihiro Takahashi; Kimihiro Sasaki20002000, vol.100, no.396
Proposal of chemical sputtering method and its application to prepare large grain size poly-Si filmsKoji Kamesaki; Atsushi Masuda; Akira Izumi; Hideki Matsumura20002000, vol.100, no.396
Controlling the position of the grain boundary in an Si film crystallized by linearly polarized laser beamYasunori Nakata; Susumu Horita20002000, vol.100, no.396
Low temperature growth of 3C-SiC by triode plasma CVD using monomethylsilaneTomohiko Maeda; Yuzuru Narita; Kanji Yasui; Tadashi Akahane20002000, vol.100, no.396
Generation of NH{sub}3 plasma using a helical antenna and an attempt of nitridation of semiconductor surfacesTatsurou Arayama; Satoshi Okutani; Kanji Yasui; Masashi Akahane20002000, vol.100, no.396
Preparation of crystalline carbon thin film by hot filament-assisted sputtering (faculty of engineering, Shinshu University)Y. Matsumoto; S. Takeda; M. Nakao; K. Kamimura; Y. Onuma20002000, vol.100, no.396
Estimation of specific contact resistance for extremely low value resistorShinsuke Okada; Soichiro Ibaraki; Masato Nakao; Yosiharu Onuma; Kiichi Kamimura; Hidemi Ohe; Toshiyuki Sakuma20002000, vol.100, no.396
Nb doped SnO{sub}2 transparent conductive oxide films for analog type touch panelsE. Kishio; N. Kikuchi; E. Kusano; H. Nanto; A. Kinbara20002000, vol.100, no.396



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