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2000, vol.100, no.295	2000, vol.100, no.296	2000, vol.100, no.373	2000, vol.100, no.374	2000, vol.100, no.477	2000, vol.100, no.517
2000, vol.100, no.603	2000, vol.100, no.652	2000, vol.100, no.653	2000, vol.100, no.668

题名	作者	出版年	年卷期
High performance and damage-free plasma etching processor for future ULSI patterning	Seiji Samukawa	2000	2000, vol.100, no.373
Damage-free contact etching using balanced electron drift magnetron plasma	Ryu Kaihara; Masaki Hirayama; Shigetoshi Sugawa; Tadahiro Ohmi	2000	2000, vol.100, no.373
Breakdown mechanism of thin gate oxide films	A. Teramoto; M. Inoue; H. Umeda; Y. Ohno; A. Nishimoto	2000	2000, vol.100, no.373
Hydrogen-free and damage-free nitridation of Si substrate using atomic nitrogen radicals	Yoshihisa Fujisaki; Hiroshi Ishiwara	2000	2000, vol.100, no.373
Improvement of SiO{sub}2/Si interfaces prepared by radical oxygen process	Koji Usuda; Makoto Nagamine; Hitoshi Itoh; Akira Toriumi	2000	2000, vol.100, no.373
Low temperature formation of silicon oxynitride films by microwave-excited high-density Kr/O{sub}2/N{sub}2 plasma	Kazuo Ohtsubo; Yuji Saito; Katsuyuki Sekine; Masaki Hirayama; Shigetoshi Sugawa; Herzl Aharoni; Tadahiro Ohmi	2000	2000, vol.100, no.373