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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:硅器件和材料
收藏年代
2000~2025
全部
2000
2001
2002
2009
2013
2014
2015
2017
2020
2021
2022
2023
2024
2025
2000, vol.100, no.295
2000, vol.100, no.296
2000, vol.100, no.373
2000, vol.100, no.374
2000, vol.100, no.477
2000, vol.100, no.517
2000, vol.100, no.603
2000, vol.100, no.652
2000, vol.100, no.653
2000, vol.100, no.668
题名
作者
出版年
年卷期
Fluorine passivation technology on metal surface
Hiroto Izumi; Yoshihiro Kikunaga; Masatsugu Kawawaki; Hirohisa Kikuyama; Toshihisa Sakurai; Tadahiro Ohmi
2000
2000, vol.100, no.374
A study of the qualities of silicon oxide film formed and CVD silicon oxide film irradiated by high-density Kr/O{sub}2 mixed plasma at low temperature
Jun Takano; Yuji Saito; Toshihisa Sakurai; Tadahiro Ohmi; Tatsuhiro Yabune
2000
2000, vol.100, no.374
Adsorption of SiH{sub}4 on Si(100)
Masanori Shinohara; Akio Seyama; Nozomu Kamakura; Yasuo Kimura; Michio Niwano
2000
2000, vol.100, no.374
Silane adsorption processes on SiGe surfaces
Nozomu Kamakura; Akio Seyama; Masanori Shinohara; Yasuo Kimura; Michio Niwano
2000
2000, vol.100, no.374
Effect of pre-cleaning of SiGe selective epitaxial growth on HBT characteristics
Y. Kiyota; K. Oda; E. Ohue; R. Hayami; M. Kondo; K. Washio; M. Tanabe; H. Shimamoto; O. Yamaguchi; T. Inada
2000
2000, vol.100, no.374
Mechanism of oxide formation on Si surfaces in fluorine-based solution and the effect of residual oxide on solicitation process
Yoshihiro Sugita
2000
2000, vol.100, no.374
Suppression of inverse narrow channel effects by novel shallow trench isolation fabrication process with rapid thermal oxidation for linear and gate oxide formation
K. Shiozawa; K. Horita; Y. Itoh; H. Umeda; T. Uchida; K. Goto; T. Kuroi; Y. Tokuda; Y. Inoue; S. Satoh; M. Inuishi
2000
2000, vol.100, no.374
Electromigration performance of damascene interconnects with Cu/Ti/TiN/Ti layered structure
Kazuhide Abe; Syunichi Tokitoh; Hiroshi Onoda
2000
2000, vol.100, no.374
High-efficiency silicon CMOS power amplifier for GHz-band digital cellular system
M. Yokoyama; R. Tachibana; K. Tsubouchi
2000
2000, vol.100, no.374
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