期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：集成电路
收藏年代2000～2024



全部

2000 2001 2002 2007 2010 2011
2013 2014 2015 2018 2020 2021
2022 2023 2024

2000, vol.100, no.237 2000, vol.100, no.238 2000, vol.100, no.309 2000, vol.100, no.310 2000, vol.100, no.41 2000, vol.100, no.42
2000, vol.100, no.5 2000, vol.100, no.6

题名作者出版年年卷期
Embedded DRAM macro with dynamically shift-switched dataline redundancyOsamu Wada; Toshimasa Namekawa; Shinji Miyano; Ryo Fukuda; Ryo Haga; Kenji Numata20002000, vol.100, no.5
A 16 MB cache DRAM LSI with internal 35.8 GB/s memory bandwidth for simulataneous read and write operationHideki Sakakibara; Michiaki Nakayama; Mitsugu Kusunoki; Kohzaburo Kurita; Yuji Yokoyama; Syuichi Miyaoka; Jyun-ichi Koike; Nobuo Tamba; Toru Kobayashi; Masaji Kume; Hideo Sawamoto; Atsumi Kawata; Hirotoshi Tanaka; Yoshifumi Takada; Masakazu Yamamoto20002000, vol.100, no.5
Magnetic random access memory (MRAM)Hideaki Numata; Sadahiko Miura; Shuichi Tahara20002000, vol.100, no.5
High-speed high-density RAM: PLEDM (phase-state low electron-number drive memory)K. Nakazato; T. Kisu; K. Itoh; H. Mizuta20002000, vol.100, no.5
Performance and energy evaluation of a dynamically variable line-size cacheKoji Inoue; Koji Kai; Kazuaki Murakami20002000, vol.100, no.5
A novel DRAM architecture for high-speed array operation with improved data retention characteristicsTakashi Kono; Kei Hamade; Takeshi Hamamoto; Katsuyoshi Mitsui; Yasuhiro Konishi20002000, vol.100, no.5
High-speed sensing scheme in a 1 v low-voltage contact-programming mask ROMRyuhei Sasagawa; Isao Fukushi; Makoto Hamaminato; Shoichiro Kawashima20002000, vol.100, no.5
A sampling weak-program method to tighten Vth-distribution of 0.5v for low-voltage flash memoriesH. Shiga; T. Tanzawa; A. Umezawa; T. Taura; Y. Takano; M. Saito; S. Kitamura; T. Miyaba; S. Mori; S. Atsumi20002000, vol.100, no.5



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