期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2025



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2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023
2024 2025

2001, vol.101, no.107 2001, vol.101, no.108 2001, vol.101, no.246 2001, vol.101, no.247 2001, vol.101, no.320 2001, vol.101, no.321
2001, vol.101, no.350 2001, vol.101, no.430 2001, vol.101, no.515 2001, vol.101, no.571 2001, vol.101, no.573 2001, vol.101, no.718
2001, vol.101, no.719

题名作者出版年年卷期
Low-temperature formation of high-k gate dielectric MIS structureShin-ichi Nakao; Munekatsu Nakagawa; Ichiro Ohshima; Hiroyuki Shimada; Tadahiro Ohmi20012001, vol.101, no.108
New deposition technique of VCD-Ta{sub}2O{sub}5, ZrO{sub}2 films for reducing surface roughnessT. Takahashi; S. Aoyama; H. Shinriki20012001, vol.101, no.108
Energy band alignment and energy distribution of electronic defect states for ZrO{sub}2/Si(100) systemsM. Narasaki; M. Ogasawara; M. Yamaoka; H. Murakami; S. Miyazaki; M. Hirose20012001, vol.101, no.108
Preparation and characterization of ZrO{sub}2 high-k gate insulator films by PLDSatoshi Kitai; Masayuki Sougawa; Hirofumi Kanda; Takeshi Kanashima; Masanori Okuyama20012001, vol.101, no.108
Structural and electrical characteristics of HfO{sub}2 films fabricated by pulsed laser depositionHiroya Ikeda; Satoru Goto; Kazutaka Honda; Mitsuo Sakashita; Akira Sakai; Shigeaki Zaima; Yukio Yasuda20012001, vol.101, no.108
HfO{sub}2 film deposition by MOCVD using Hf(NEt{sub}2){sub}4 as a source gasY. Ohshita; A. Ogura; A. Hoshino; T.Suzuki; H. Machida20012001, vol.101, no.108



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