期刊


ISSN0385-4221
刊名電気学会論文誌
参考译名电气学会论文集:C电子学、信息工程、系统部分
收藏年代1998～2024



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023 2024

2001, vol.121-C, no.1 2001, vol.121-C, no.10 2001, vol.121-C, no.11 2001, vol.121-C, no.12 2001, vol.121-C, no.2 2001, vol.121-C, no.3
2001, vol.121-C, no.4 2001, vol.121-C, no.5 2001, vol.121-C, no.6 2001, vol.121-C, no.7 2001, vol.121-C, no.8 2001, vol.121-C, no.9

题名作者出版年年卷期
SOI technology originated in Japan: for the special issue of the "supermicrostructure integrated devices and process technologies"Yasuo Tarui20012001, vol.121-C, no.3
Current progress in SOI wafer technologyKatsutoshi Izumi20012001, vol.121-C, no.3
Issue of SOI MOS transistor and its improvementYasuo Yamaguchi; Takashi Ipposhi; Shigeto Maegawa20012001, vol.121-C, no.3
VLSI design and education center: the national center that supports education and research on VLSI designKoichiro Hoh; Kunihiro Asada; Makoto Ikeda20012001, vol.121-C, no.3
Degradation of direct-tunneling gate oxide under hot hole injectionKamakura Yoshinari; Deguchi Kazuaki; Ishida Akihiro; Uno Shigeyasu; Taniguchi Kenji20012001, vol.121-C, no.3
Metal-gate, Schottky-source/drain SOI-MOSFET for complementary integrationKen Matsuura; Tetsuya Fukuoka; Ryo Tanabe; Minoru Fujishima; Koichiro Hoh20012001, vol.121-C, no.3
Stress induced electromigration failure in ULSI interconnectsKazuhiro Hoshino20012001, vol.121-C, no.3
Evaluation of Si nanowires through device characteristics and improvement in uniformity of Si nanowire width using self-limiting oxidationToshiyuki Tsutsumi; Eiichi Suzuki; Kenichi Ishii; Seigo Kanemaru; Hiroshi Hiroshima; Kazutaka Tomizawa20012001, vol.121-C, no.3
A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migrationTsutomu Sato; Ichiro Mizushima; Yoshitaka Tsunashima20012001, vol.121-C, no.3
Synthesis and analysis of a discrete-time CNN using 1-dimensional cell circuits with S stable points (S=2.3.4,....)Kei Eguchi; Yasukazu Seiki; Toru Tabata; Hongbing Zhu; Fumio Ueno; Takahiro Inoue20012001, vol.121-C, no.3
1234



制造业外文文献服务平台