期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2002, vol.31, no.1 2002, vol.31, no.2 2002, vol.31, no.3 2002, vol.31, no.4 2002, vol.31, no.5 2002, vol.31, no.6

题名作者出版年年卷期
Digital-reflectometry characterization of the surface structure and protective property of thin filmsV. A. Kotenev20022002, vol.31, no.6
Non-Archimedean calculus in the mathematical modeling of digital ICsE. G. Shcheglov; P. A. Arutyunov20022002, vol.31, no.6
Predicting the effect of pulsed ionizing radiation on operational amplifiersT. M. Agakhanyan; A. Y. Nikiforov20022002, vol.31, no.6
Modeling the high- voltage gas-discharge-plasma etching of SiO{sub}2V. A. Kolpakov20022002, vol.31, no.6
Microelectromechanical system for controlling flow past an airfoil: pressure transducersA. A. Taskin; B. I. Fomin; E. I. Cherepov; V. A. Gridchin; V. M. Lubimsky; S. P. Khabarov; G. R. Grek; A. V. Dovgal; V. V. Kozlov20022002, vol.31, no.6
Mid- and long-wave IR detectors using an Hg{sub}(1-x)Cd{sub}xTe heteroepitaxial layerV. V. Vasilyev; A. G. Golenkov; S. A. Dvoretsky; D. G. Esaev; T. I. Zakhar'yash; A. G. Klimenko; A. I. Kozlov; I. V. Marchishin; V. N. Ovsyuk; V. P. Reva; Yu. G. Sidorov; F. F. Sizov; A. O. Suslyakov; N. Kh. Talipov20022002, vol.31, no.6
X-ray and UV Adjustment of threshold voltage in MOS-circuit manufactureM. N. Levin; V. R. Gitlin; A. V. Tatarinstev; S. S. Ostrouhov; S. G. Kadmensky20022002, vol.31, no.6
Helicon plasma sourceO. V. Braginskii; A. N. Vasil'eva; A. S. Kovalev20022002, vol.31, no.6
Instability conditions of the stationary nonconducting state for the bispinA. P. Lysenko20022002, vol.31, no.5
Effect of discontinuities on ULSI on-chip interconnection characteristicsV. A. Goryachev20022002, vol.31, no.5
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