期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：集成电路
收藏年代2000～2024



全部

2000 2001 2002 2007 2010 2011
2013 2014 2015 2018 2020 2021
2022 2023 2024

2002, vol.102, no.2 2002, vol.102, no.234 2002, vol.102, no.3 2002, vol.102, no.525 2002, vol.102, no.82 2002, vol.102, no.83

题名作者出版年年卷期
Memory design using one-transistor gain cell on SOI - proposal of a novel RAM cell of 4F{sup}2 sizeTakashi Ohsawa; Katsuyuki Fujita; Tomoki Higashi; Yoshihisa Iwata; Takeshi Kajiyama; Yoshiaki Asao; Kazumasa Sunouchi20022002, vol.102, no.2
0.13um 32Mb/64Mb embedded DRAM core with high efficient redundancy and enhanced testabilityTakaharu Tsuji; Hirohito Kikukawa; Shigeki Tomishima; Toshiaki Kawasaki; Shouji Sakamoto; Yoshifumi Fukushima; Hiroaki Tanizaki; Masatoshi Ishikawa; Wataru Abe; Hiroshi Kato; Toshitaka Uchikoba; Toshihiro Inokuchi; Manabu Senoh; Mitsutaka Niiro20022002, vol.102, no.2
Develop of embedded DRAM macro based on 0.13umCMOS logic process technology for high performance applicationsKohichi Kuroki; Haruyuki Okuda; Tsuyosi Konishi; Takuji Katsuhisa; Mamoru Fujita; Isao Naritake20022002, vol.102, no.2
High-speed content-addressable memory using synchronous hamming distance search circuitsYusuke Oike; Makoto Ikeda; Kunihiro Asada20022002, vol.102, no.2
A 44mm{sup}2 4-bank 8-word page-read 64Mb memory with flexible block redundancy and fast accurate word-line voltage controllerNaoya Tokiwa; Toru Tanzawa; Akira Umezawa; Tadayuki Taura; Hitoshi Shiga; Yoshinori Takano; Hiroshi Watanabe; Kazunori Masuda; Kiyomi Naruke; Shigeru Atsumi20022002, vol.102, no.2
A 125mm{sup}2 1Gb NAND flash memory with 10MB/s program throughputKoichi Kawai; Kenichi Imamiya; Hiroshi Nakamura20022002, vol.102, no.2
A giga-scale assist-gate (AG)-AND type flash memory cell for content-downloading applicationsT. Kobayashi; Y. Sasago; H. Kurata; S. Saeki; Y. Goto; T. Arigane; Y. Okuyama; H. Kume; K. Kimura20022002, vol.102, no.2



制造业外文文献服务平台