期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：集成电路
收藏年代2000～2024



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2000 2001 2002 2007 2010 2011
2013 2014 2015 2018 2020 2021
2022 2023 2024

2002, vol.102, no.2 2002, vol.102, no.234 2002, vol.102, no.3 2002, vol.102, no.525 2002, vol.102, no.82 2002, vol.102, no.83

题名作者出版年年卷期
A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric filmToshiyuki Nishihara; Yasuyuki Ito20022002, vol.102, no.3
Design of ferroelectric-based logic-in-memory VLSIHirmitsu Kimura; Takahiro Hanyu; Michitaka Kameyama; Yoshikazu Fujimori; Takashi Nakamura; Hidemi Takasu20022002, vol.102, no.3
Development of nonvolatile logic with ferroelectric capacitorsYoshikazu Fujimori; Takashi Nakamura; Hidemi Takasu20022002, vol.102, no.3
Development of 0.1μm-rule MRAM cellKiyotaka Tsuji; Katsumi Suemitsu; Tomonori Mukai; Kiyokazu Nagahara; Koichi Masubuchi; Hiraoki Utsumi; Kuniko Kikuta20022002, vol.102, no.3
Impact of lower dot size scaling on charge retention in doubly stacked Si dot memoryRyuji Ohba; Naoharu Sugiyama; Junji Koga; Ken Uchida20022002, vol.102, no.3
MEID: reliable nonvolatile memory concept using nano-dot storage nodeTo Mo Yuki Ishii; Taro Osabe; Toshiyuki Mine; Fumio Murai; Kazuo Yano20022002, vol.102, no.3
SESO: scalable memory using ultra-thin polycrystalline siliconTo Mo Yuki Ishii; Taro Osabe; Toshiyuki Mine; Fumio Murai; Kazuo Yano20022002, vol.102, no.3
Panel Discussion: what is the most suitable on-chip memory for 90-65nm CMOS technologyKoichiro Ishibashi20022002, vol.102, no.3



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