期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2003, vol.32, no.1 2003, vol.32, no.2 2003, vol.32, no.3 2003, vol.32, no.4 2003, vol.32, no.5 2003, vol.32, no.6

题名作者出版年年卷期
In{sub}Ga{sub}(1-x) as strained-layer quantum well in a pseudomorphic heterostructure: high-resolution XRD characterization for different quantum-well thicknessesA. M. Afanas'ev; R. M. Imamov; A. A. Lomov; V. G. Mokerov; M. A. Chuev; Yu. V. Fedorov; Yu. V. Khabarov20032003, vol.32, no.2
High-permittivity-insulator EEPROM cell using Al{sub}2O{sub}3 or ZrO{sub}2V. A. Gritsenko; K. A. Nasyrov; Yu. N. Novikov; A. L. Aseev20032003, vol.32, no.2
Planar power MOSFETs for smart power CMOS switchesM. A. Korolev; R. D. Tikhonov20032003, vol.32, no.2
Current-voltage characteristics of two-electrode elements with carbon nanotubesI. I. Bobrinetskii; V. K. Nevolin; V. I. Petrik; Yu. A. Chaplygin20032003, vol.32, no.2
Impulse-current generation by the bispin: factors determining the peak currentA. P. Lysenko20032003, vol.32, no.2
Electrochemical etching of a niobium film through a thin nanomask formed by AFM tip-induced local oxidationA. N. Red'kin; L. V. Malyarevich; I. V. Malikov; G. M. Mikhailov20032003, vol.32, no.2
Surface-photovoltage measurement of volume electron lifetime in p-Si wafersV. A. Skidanov; M. S. Baev; N. A. Baikova20032003, vol.32, no.2
Temperature dependence of carrier generation at the silicon-lead-borosilicate-glass interfaceS. I. Vlasov; P. B. Parchinskii; L. G. Ligai20032003, vol.32, no.2
NANODEV: a nanoelectronic-device simulation software systemI. I. Abramov; I. A. Goncharenko; S. A. Ignatenko; A. V. Korolev; E. G. Novik; A. I. Rogachev20032003, vol.32, no.2
Prediction of local and global ionization effects on ICs: the synergy between numerical and physical simulationV. V. Belyakov; A. I. Chumakov; A. Y. Nikiforov; V. S. Pershenkov; P. K. Skorobogatov; A. V. Sogoyan20032003, vol.32, no.2
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