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期刊
ISSN
0129-1564
刊名
International Journal of High Speed Electronics and Systems
参考译名
国际高速电子学与系统杂志
收藏年代
2000~2023
全部
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2004, vol.14, no.1
2004, vol.14, no.2
2004, vol.14, no.3
2004, vol.14, no.4
题名
作者
出版年
年卷期
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Dynamic Breakdown
J. Kostamovaara; M. E. Levinshtein; S. Vainshtein
2004
2004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Avalanche Injection
J. Kostamovaara; M. E. Levinshtein; S. Vainshtein
2004
2004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Static Avalanche Breakdown
J. Kostamovaara; M. E. Levinshtein; S. Vainshtein
2004
2004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Avalanche Multiplication
J. Kostamovaara; M. E. Levinshtein; S. Vainshtein
2004
2004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Introductory Chapter
J. Kostamovaara; M. E. Levinshtein; S. Vainshtein
2004
2004, vol.14, no.4
INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-S1C SIT
YOUNG CHUL CHOI; HO-YOUNG CHA; LESTER F. EASTMAN; MICHAEL G. SPENCER
2004
2004, vol.14, no.3
ION IMPLANTED SiC STATIC INDUCTION TRANSISTOR WITH 107 W OUTPUT POWER AND 59% POWER ADDED EFFICIENCY UNDER CW OPERATION AT 750 MHZ
G. C. DE SALVO; P. M. ESKER; T. A. FLINT; J. A. OSTOP; E. J. STEWART; T. J. KNIGHT; K. J. PETROSKY; S. D. VAN CAMPEN; R. C. CLARKE; G. M. BATES
2004
2004, vol.14, no.3
ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFET
R. S. GUPTA; SANDEEP KUMAR AGGARWAL; RITESH GUPTA; MRIDULA GUPTA; SUBHASIS HALDAR
2004
2004, vol.14, no.3
EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICS
SANKHA S. MUKHERJEE; SYED S. ISLAM
2004
2004, vol.14, no.3
SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC MESFETs
HO-YOUNG CHA; Y. C. CHOI; LESTER F. EASTMAN; MICHAEL G. SPENCER
2004
2004, vol.14, no.3
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