期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2011 2012
2013 2014 2017 2018 2019 2020
2021 2022 2023

2004, vol.14, no.1 2004, vol.14, no.2 2004, vol.14, no.3 2004, vol.14, no.4

题名作者出版年年卷期
QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP HI-NITRIDESK. W. KIM; V. A. KOCHELAP; V. N. SOKOLOV; S. M. KOMIRENKO20042004, vol.14, no.1
HIGH FIELD TRANSPORT IN AlNRAMON COLLAZO; RAOUL SCHLESSER; ZLATKO SITAR20042004, vol.14, no.1
INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORSG. SIMIN; M. ASIF KHAN; M. S. SHUR; R. GASKA20042004, vol.14, no.1
GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICESSERGEY L. RUMYANTSEV; NEZIH PALA; MICHAEL S. SHUR; MICHAEL E. LEVINSHTEIN; REMIS GASKA; M. ASIF KHAN; GRIGORY SIMIN20042004, vol.14, no.1
High Voltage AlGaN/GaN Heterojunction TransistorsL. S. McCarthy; N-Q. Zhang; H. Xing; B. Moran; S. DenBaars; U. K. Mishra20042004, vol.14, no.1
ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHINGYAN GAO; ILAN BEN-YAACOV; UMESH MISHRA; EVELYN HU20042004, vol.14, no.1
Electronic Properties of GaN (0001) - Dielectric InterfacesT. E. Cook, Jr.; C. C. Fulton; W. J. Mecouch; R. F. Davis; G. Lucovsky; R. J. Nemanich20042004, vol.14, no.1
GROWTH OF THICK GaN FILMS AND SEEDS FOR BULK CRYSTAL GROWTHP. R. TAVERNIER; E. V. ETZKORN; D. R. CLARKE20042004, vol.14, no.1
CRACKING OF GaN FILMSE. V. ETZKORN; D. R. CLARKE20042004, vol.14, no.1
STRAIN OF GaN LAYERS GROWN USING 6H-SiC(0001) SUBSTRATES WITH DIFFERENT BUFFER LAYERSS. EINFELDT; Z. J. REITMEIER; R. F. DAVIS20042004, vol.14, no.1
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