期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2007, vol.36, no.1 2007, vol.36, no.2 2007, vol.36, no.3 2007, vol.36, no.4 2007, vol.36, no.5 2007, vol.36, no.6

题名作者出版年年卷期
Analyzing Conductance-Frequency Curves of Metal-Insulator-Semiconductor Structures Subject to Surface-Potential Fluctuations and Electrically Active States inside the InsulatorN. A. Avdeev; I. V. Klimov; R. A. Yakovlev20072007, vol.36, no.6
Highly Doped Si/SiO{sub}2/W Sandwich Structures with an Exposed Insulator Edge: Electrical Transport and ElectroformingV. M. Mordvintsev; S. E. Kudrjavtsev20072007, vol.36, no.6
Kinetics and Mechanisms of Cl{sub}2 or HCl Plasma Etching of CopperA. M. Efremov; S. A. Pivovarenok; V. I. Svettsov20072007, vol.36, no.6
Liquid-Crystal Thermography of Hot Spots on Electronic ComponentsV. M. Popov; A. S. Klimenko; A. P. Pokanevich; I. I. Gavrilyuk; N. V. Moshel20072007, vol.36, no.6
New Approach to the Manufacturing of Power Microwave Bipolar Transistors: A Computer SimulationYu. P. Snitovsky; V. V. Nelayev; V. A. Efremov20072007, vol.36, no.6
Photoassisted Scanning-Probe Nanolithography on Ti FilmsO. A. Ageev; B. G. Konoplev; V. V. Polyakov; A. M. Svetlichnyi; V. A. Smirnov20072007, vol.36, no.6
Self-Organized Growth Mechanism for Porous Aluminum Anodic OxideA. I. Vorobyova; E. A. Outkina; A. A. Khodin20072007, vol.36, no.6
Reverse I-V Characteristics of a Diode-Connected Heterostructure MESFETS. B. Burzin; V. I. Starosel'skii; S. S. Shmelev20072007, vol.36, no.6
Tungstic Acid-Assisted Thermal Oxidation of GaAsS. S. Lavrushina; I. Ya. Mittova; A. N. Lukin; T. V. Kharitonova; A. V. Popelo20072007, vol.36, no.6
Control of the Adhesion Strength of Thin Metal Films in Multilayer StructuresZ. I. Taliashvili; L. R. Vardosanidze; L. B. Jangidze; A. N. Tavkhelidze, Jr.20072007, vol.36, no.5
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