期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2009, vol.38, no.1 2009, vol.38, no.2 2009, vol.38, no.3 2009, vol.38, no.4 2009, vol.38, no.5 2009, vol.38, no.6

题名作者出版年年卷期
Quantum State Depressions in Thin Metal Films with an Indented SurfaceA. N. Tavkhelidze; A. P. Bibilashvili; L. B. Jangidze; B. B. Olsen; H. Walitzki; A. Feinerman20092009, vol.38, no.6
Positronics and Nanotechnologies: Possibilities of Studying Nanoobjects in Critical Engineering Materials Using Positron Annihilation SpectrometryV. I. Grafutin; E. P. Prokop'ev; S. P. Timoshenkov; S. S. Evstaf'ev; Yu. V. Funtikov20092009, vol.38, no.6
Constructivist Treatment of Bell's Inequality Violations and the No-Hidden-Variable TheoremsY. I. Ozhigov20092009, vol.38, no.6
Nonequivalence of Biparticle and Multiparticle Quantum EntanglementsA. Yu. Chernyavskii20092009, vol.38, no.6
A Semianalytical Model of a Thin-Channel Field-Effect TransistorA. N. Khomyakov; V. V. V'yurkov20092009, vol.38, no.6
Simulation of the Effects of Deep Grooving in Silicon in the Plasmochemical Cyclic ProcessA. S. Shumilov; I. I. Amirov; V. F. Lukichev20092009, vol.38, no.6
Nano- and Micrometer-Scale Thin-Film-Interconnection Failure Theory and Simulation and Metallization Lifetime Prediction, Part 1K. A. Valiev; R. V. Goldstein; Yu. V. Zhitnikov; T. M. Makhviladze; M. E. Sarychev20092009, vol.38, no.6
A Device for Controlling the Voltage Standing-Wave Ratio of Microwave AttenuatorsS. N. Grigor'ev20092009, vol.38, no.5
Lead-Free Alloy Soldering of DiesV. V. Zenin; V. I. Baiko; O. V. Marchenko; V. I. Frolov; O. V. Khishko20092009, vol.38, no.5
Deposition of the IV-VI Films by the Hot-Wall Method on Silicon Substrates 100 mm in DiameterV. I. Rudakov; A. L. Kurenya; A. A. Shornikov; M. L. Gitlin20092009, vol.38, no.5
12345



制造业外文文献服务平台