期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2009, vol.38, no.1 2009, vol.38, no.2 2009, vol.38, no.3 2009, vol.38, no.4 2009, vol.38, no.5 2009, vol.38, no.6

题名作者出版年年卷期
Specific Features of Radiation-Stimulated Breakdown of a Nonuniformly Doped p-n JunctionA. S. Puzanov; S. V. Obolensky20092009, vol.38, no.1
Operability Analysis of Submicron CMOS-Based VLSI RAMs Operated under Extreme Thermal ConditionsA. A. Krasnyuk; V. Ya. Stenin; I. G. Cherkasov; A. V. Yakovlev20092009, vol.38, no.1
Calculation of Surface Recombination Current in Bipolar Microelectronic Structures Subjected to Ionizing RadiationV. S. Pershenkov; D. V. Savchenkov; A. S. Bakerenkov; A. S. Egorov20092009, vol.38, no.1
Prospects for Using Submicron CMOS VLSI in Fault-Tolerant Equipment Operating Under Exposure to Atmospheric NeutronsV. B. Betelin; S. V. Baranov; S. G. Bobkov; A. A. Krasnyuk; P. N. Osipenko; V. Ya. Stenin; I. G. Cherkasov; A. I. Chumakov; A. V. Yanenko20092009, vol.38, no.1
Functional-Logical Simulation of Quality of Functioning Integrated Circuits Under the Effect of Radiation and Electromagnetic FieldV. M. Barbashov; N. S. Trushkin20092009, vol.38, no.1
Experimental Studies of the Adequacy of Laser Simulations of Dose Rate Effects in Integrated Circuits and Semiconductor DevicesA. Yu. Nikiforov; P. K. Skorobogatov; A. I. Chumakov; A. V. Kirgizova; A. G. Petrov; P. P. Kutsko; A. V. Kuzmin; A. A. Borisov; V. A. Telets; V. T. Punin; V. S. Figurov20092009, vol.38, no.1



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