期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



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2010, vol.110, no.10 2010, vol.110, no.100 2010, vol.110, no.102 2010, vol.110, no.103 2010, vol.110, no.110 2010, vol.110, no.113
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2010, vol.110, no.99

题名作者出版年年卷期
Effect of Temperature on the Formation of ZnS Nanostructures and PropertiesMani NAVANEETHAN; Jayaram ARCHANA; K. D. NISHA; Mukkannan ARIVANANDHAN; Suruttaiyaudaiyar PONNUSAMY; Chellamuthu MUTHAMIZHCHELVAN; Yasuhiro HAYAKAWA20102010, vol.110, no.30
Effect of Gravity on the Growth of Alloy Semiconductor Bulk CrystalsYasuhiro HAYAKAWA; Mukannan ARIVANANDHAN; Govindasamy RAJESH; Tadanobu KOYAMA; Yoshimi MOMOSE; Hisashi MORII; Toru AOKI; Akira TANAKA; Yasunori OKANO; Tetsuo OZAWA; Yuko INATOMI20102010, vol.110, no.30
Single Photon Detection in Single Dot and Multi Dots Channel Phosphorus-Doped SOI-FETArief UDHIARTO; Daniel MORARU; Ryusuke NAKAMURA; Sakito MIKI; Takeshi MIZUNO; Michiharu TABE20102010, vol.110, no.30
Charging phenomena of a single electron in P-doped Si SOI-MOSFETsEarfan Hamid; Juli Cha Tarido; Sakito Miki; Daniel Moraru; Takeshi Mizuno; Michiharu Tabe20102010, vol.110, no.30
青色EL素子用SrS:Cu薄膜のステップアニール効果以西雅章; 加藤卓20102010, vol.110, no.30
RFマグネトロンスパッタリング法によるLiMn_2O_4薄膜の生成条件の調査中村光宏; 以西雅章20102010, vol.110, no.30
シリコンを用いた単電子冷却デバイスの研究池田浩也; ファイズサレ20102010, vol.110, no.30
Ga_2O_3酸素センサの作製と評価茅野真也; 山口直哉; 以西雅章20102010, vol.110, no.30
Eu添加AlGaN/GaN HEMT構造を用いた発光素子の検討近藤正樹; 秦貴幸; 岡田浩; 若原昭浩; 古川雄三; 佐藤真一郎; 大島武20102010, vol.110, no.30
白金担持TiO_2薄膜の生成と光触媒特性中村郁太; 伊藤達也; 以西雅章; 星陽一20102010, vol.110, no.30
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