期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：安全性
收藏年代2000～2019



全部

2000 2001 2002 2006 2007 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019

2010, vol.110, no.110 2010, vol.110, no.145 2010, vol.110, no.242 2010, vol.110, no.303 2010, vol.110, no.346 2010, vol.110, no.387
2010, vol.110, no.45 2010, vol.110, no.472

题名作者出版年年卷期
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFETTakuya Imamoto; Takeshi Sasaki; Tetsuo Endoh20102010, vol.110, no.110
Impact of Floating Body type DRAM with the Vertical MOSFETYuto Norifusa; Tetsuo Endoh20102010, vol.110, no.110



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