期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



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2024

2011, vol.111, no.102 2011, vol.111, no.103 2011, vol.111, no.106 2011, vol.111, no.108 2011, vol.111, no.109 2011, vol.111, no.111
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题名作者出版年年卷期
SiC表面の直接窒化と窒化層／SiC界面特性の評価酒井崇史; 逸見充則; 村田裕亮; 鈴木真一郎; 山上朋彦; 林部林平; 上村喜一20112011, vol.111, no.176
SiC層中に埋め込まれたGe·SiCドットの発光特性大谷孝; 姉崎豊; 浅野翔; 加藤有行; 成田克; 中澤日出樹; 加藤孝弘; 安井寛治20112011, vol.111, no.176
レーザーアブレーション法によるAlN成長のSi基板面方位依存性鈴木大樹; 熊谷知貴; 中澤日出樹20112011, vol.111, no.176
TSFZ法による高温超伝導体Bi-2223単結晶の育成と評価足立伸太郎; 臼井友洋; 橋本雄三; 渡辺孝夫; 藤井武則20112011, vol.111, no.176
組成を変化させたZrB_x薄膜の特性評価武山真弓; 佐藤勝; 野矢厚20112011, vol.111, no.176
プラズマCVD法によるSiおよびN同時添加DLC膜特性に対する水素の影響奥野さおり; 三浦創史; 鎌田亮輔; 中澤日出樹20112011, vol.111, no.176
レーザーアブレーション法によるDLC膜特性に及ぼすB、N添加の影響毛内裕介; 遅澤遼一; 中澤日出樹20112011, vol.111, no.176
低温と室温におけるコンダクタンス法の組み合わせによるGe-MIS構造の界面準位密度評価岩崎拓郎; 佐藤真哉; 鈴木聡一郎; 小野俊郎; 福田幸夫; 岡本浩20112011, vol.111, no.176
ECRプラズマ法によって作製したGe-MIS構造のDLTSとC-t測定による評価佐藤真哉; 岩崎拓郎; 鈴木聡一郎; 小野俊郎; 福田幸夫; 岡本浩20112011, vol.111, no.176
反応性スパッタ法によるCuAlO_2薄膜の作製とアニール効果阿部克也; 横本拓也; 前田洋輔; 宮澤匠20112011, vol.111, no.176
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