期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



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题名作者出版年年卷期
Effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by ECR plasma sputteringDae-Hee Han; Shun-ichro Ohmi20112011, vol.111, no.249
Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate InsulatorMin LIAO; Hiroshi ISHIWARA; Shun-ichiro OHMI20112011, vol.111, no.249
異常Stress Induced Leakage Currentの発生·回復特性の統計的評価稲塚卓也; 熊谷勇喜; 黒田理人; 寺本章伸; 須川成利; 大見忠弘20112011, vol.111, no.249
完全空乏型SOI MOSFETにおける特性ばらっきとランダムテレグラフノイズ平本俊郎20112011, vol.111, no.249
ラジカル反応ベース絶縁膜形成技術における界面平坦化効果と絶縁膜破壊特性との関係黒田理人; 寺本章伸; 李翔; 諏訪智之; 須川成利; 大見忠弘20112011, vol.111, no.249
学問に基づいた本物のシリコン産業技術の創出大見忠弘20112011, vol.111, no.249
角度分解硬X線光電子分光法によるHfO_2/Si／歪みGe/SiGe構造の評価野平博司; 小松新; 那須賢太郎; 星裕介; 榑林徹; 澤野憲太郎; マクシムミロノフ; 白木靖寛20112011, vol.111, no.249
32nmノードCMOSFETのチャネルひずみ評価武井宗久; 橋口裕樹; 山口拓也; 小瀬村大亮; 永田晃基; 小椋厚志20112011, vol.111, no.249
SiO_2/Si界面における構造遷移層の酸化手法依存性諏訪智之; 熊谷勇喜; 寺本章伸; 木下豊彦; 室隆桂之; 服部健雄; 大見忠弘20112011, vol.111, no.249
AR-XPSによる種々の表面処理したIn_(0.53)Ga_(0.47)As表面の化学結合状態の評価沼尻侑也; 山下晃司; 小松新; ザデダリューシュ; 角嶋邦之; 岩井洋; 野平博司20112011, vol.111, no.249
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