期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



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题名作者出版年年卷期
Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN HeterostructuresMd. Tanvir HASAN; Hirokuni TOKUDA; Masaaki KUZUHARA20112011, vol.111, no.292
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDsYoon Seok Kim; Akio Kaneta; Mitsuru Funato; Yoichi Kawakami; Takashi Kyono; Masaki Ueno; Takao Nakamura20112011, vol.111, no.292
2インチ×3枚対応MOCVDを用いた260nm帯AlGaN系UV-LEDの開発美濃卓哉; 平山秀樹; 高野隆好; 野口憲路; 椿健治20112011, vol.111, no.292
m軸およびa軸オフ角C面サファイア基板上のAlN結晶成長の特徴と高出力AlGaN深紫外LEDの作製前田哲利; 藤川紗千恵; 平山秀樹20112011, vol.111, no.292
エッチピット法によるAlNエピタキシャル膜中の貫通転位の評価野村拓也; 三宅秀人; 平松和政; 龍祐樹; 桑原崇彰; 桑野範之20112011, vol.111, no.292
ELO-AlNテンプレートを用いたSi基板上AlGaN系UV-LEDの256nm発光美濃卓哉; 平山秀樹; 高野隆好; 椿健治; 杉山正和20112011, vol.111, no.292
MOCVD法によるsapphire上への（Si）（Ga）AlC（P）薄膜の成長大西裕也; 堀江郁哉; 酒井士郎20112011, vol.111, no.292
GaNナノワイヤの有機金属気相成長法による形成と単一光子発生器への応用有田宗貴; 崔琦鉉; 荒川泰彦20112011, vol.111, no.292
近赤外1.46μm発光規則配列InGaNナノコラムLEDの作製と評価神村淳平; 岸野克巳; 神山幸一; 菊池昭彦20112011, vol.111, no.292
GaN系THz帯量子カスケードレーザ構造の作製と自然放出光の観察寺嶋亘; 平山秀樹20112011, vol.111, no.292
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