期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2012, vol.41, no.1 2012, vol.41, no.2 2012, vol.41, no.3 2012, vol.41, no.4 2012, vol.41, no.5 2012, vol.41, no.7
2012, vol.41, no.8

题名作者出版年年卷期
NV-Centers in Diamond - Part II. Spectroscopy, Spin-State Identification, and Quantum ManipulationA. V. Tsukanov20122012, vol.41, no.3
Formation of a Submicron GaAs MESFET Gate Using a Four-Layer Dielectric Dummy GateV. S. Arykov; A. M. Gavrilova; O. A. Dedkova; V. A. Kagadei; Yu. V. Lilenko20122012, vol.41, no.3
Silicon Solar Cells with Si-Ge MicroheterojunctionsB. A. Abdurakhmanov; Kh. M. Iliev; S. A. Tachilin; A. R. Toshev20122012, vol.41, no.3
Current-Voltage Characteristic and the Spectrum Width of Electrons Tunneling through W-WO_2-(Au_(147)~-)-Al_2O_3-Al and Nd-Nd_2O_3-(Au; 5)-Nd_2O_3-Nd Nanosandwiches. Part II: Construction and Analysis of ID Models for 3D NanosandwichesV. A. Zhukov; V. G. Maslov20122012, vol.41, no.3
Features of the Formation of a Low-Resistance Ge/Au/Ni/Ti/Au Ohmic Contact to n-i-GaAsE. V. Erofeev; V. A. Kagadei20122012, vol.41, no.3
Production of Ti, La, Pb, Cd, Mn, Zr, and Y Oxide Thin Films on Complex Surfaces of Etched Aluminum Foils for Electrolytic Capacitors by the Pyrolysis Method of Salts of Organic AcidsA. A. Myatiev; I. S. Krechetov; P. A. Petrenko20122012, vol.41, no.3
Nonempirical Simulation of Chemical Deposition of Silicon Nitride Films in CVD ReactorsT. M. Makhviladze; A. Kh. Minushev; M. E. Sarychev20122012, vol.41, no.3
Semiclassical Simulation of the Diffraction of a Material Wave from Two Coulomb CentersK. S. Arakelov20122012, vol.41, no.3
Optimization of the Design Flow of the System on a K64-RIO Crystal Manufactured Using the 0.18 μm TechnologyA. O. Vlasov; B. E. Evlampiev; P. G. Kirichenko; A. A. Kochnov20122012, vol.41, no.3



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