期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2012, vol.41, no.1 2012, vol.41, no.2 2012, vol.41, no.3 2012, vol.41, no.4 2012, vol.41, no.5 2012, vol.41, no.7
2012, vol.41, no.8

题名作者出版年年卷期
Single-Event-Effect Sensetivity Characterization of LSI Circuits with a Laser-Based and a Pulsed Gamma-Ray Testing Facilities Used in CombinationA. I. Chumakov; A. L. Vasil'ev; A. A. Pechenkin; D. V. Savchenkov; A. S. Tararaksin; A. V. Yanenko20122012, vol.41, no.4
An Estimate of the FPGA Sensitivity to Effects of Single Nuclear ParticlesD. V. Bobrovskii; O. A. Kalashnikov; P. V. Nekrasov20122012, vol.41, no.4
Simulation of the Local Effect of Nuclear Particles on 65-nm CMOS DICE Memory CellsV. Ya. Stenin; P. V. Stepanov20122012, vol.41, no.4
Simulation of the Local Effect of Nuclear Particles on 65-nm CMOS Elements of Two-Phase LogicsYu. V. Katunin; V. Ya. Stenin20122012, vol.41, no.4
An Analysis of the Radiation Behavior of Pulse Voltage StabilizersL. N. Kessarinskiy; D. V. Boychenko; A. Y. Nikiforov20122012, vol.41, no.4
Radiation-Induced Degradation in the Dynamic Parameters of Memory ChipsA. B. Boruzdina; A. V. Ulanova; N. G. Grigor'ev; A. Yu. Nikiforov20122012, vol.41, no.4
Investigation of the Possibility to Develop Radiation-Hardness LSIs for Navigational Purposes According to the 0.35-μm Domestic CMOS SOI TechnologyV. V. Elesin; G. N. Nazarova; G. V. Chukov; Yu. A. Kabal'nov; A. A. Titarenko20122012, vol.41, no.4
Electron Transport in Thin-Base Transistor Structures Exposed to High-Energy PhotonsA. S. Puzanov; S. V. Obolensky20122012, vol.41, no.4



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