期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
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题名作者出版年年卷期
Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTsMd. Tanvir HASAN; Hirokuni TOKUDA; Masaaki KUZUHARA20122012, vol.112, no.328
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substratesYoon Seok KIM; Akio KANETA; Mitsuru FUNATO; Yoichi KAWAKAMI; Takashi MIYOSHI; Shin-ichi NAGAHAMA20122012, vol.112, no.328
InNの非輻射性キャリア再結合過程におけるキャリア輸送及び熱活性化過程の影響今井大地; 石谷善博; 王新強; 草部一秀; 吉川明彦20122012, vol.112, no.328
近赤外光デバイスに向けた径方向InP/InAsP量子井戸ナノワイヤの形成河口研一; 中田義昭; 江川満; 山本剛之; 荒川泰彦20122012, vol.112, no.328
Inフラッシュ法を用いた1ミクロン帯広帯域発光InAs量子ドットの作製と医療イメージングヘの応用検討日野雄司; 尾崎信彦; 大河内俊介; 池田直樹; 杉本喜正20122012, vol.112, no.328
AlGaAs系フォトニック結晶構造作製に向けたICPドライエッチングマスクに関する研究栂野裕二; 北林佑太; 石川史太郎; 近藤正彦20122012, vol.112, no.328
モノリシック光源に向けたゲルマニウム発光素子の研究谷和樹; 斎藤慎一; 小田克矢; 奥村忠嗣; 峰利之; 井戸立身20122012, vol.112, no.328
光スペクトル制御回路の設計と位相誤差補償による波長特性平坦化池田達彦; 水野隆之; 高橋浩; 浅倉秀明; 津田裕之20122012, vol.112, no.328
GaNの表面処理による表面フェルミ準位変化め推定杉浦洋平; 網谷良介; 多次見大樹; 尾沼猛儀; 山口智広; 本田徹20122012, vol.112, no.328
表面活性化ボンディングによるSi·異種材料接合の電気特性評価梁剣波; 重川直輝; 日暮栄治20122012, vol.112, no.328
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