期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



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2012, vol.112, no.1 2012, vol.112, no.103 2012, vol.112, no.109 2012, vol.112, no.112 2012, vol.112, no.113 2012, vol.112, no.114
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题名作者出版年年卷期
MOS構造を有する太陽電池による変換効率の向上小林孝裕; 松尾直人; 部家彰20122012, vol.112, no.337
結晶系Si太陽電池による逆方向エレクトロルミネッセンス法を用いた電気的特性の解析杉村恵美; 嶋崎成一; 谷あゆみ; 冬木隆20122012, vol.112, no.337
プロトンビームを用いた強誘電体微構造の作製山口正樹; 渡辺和貴; 増田陽一郎20122012, vol.112, no.337
HfO_2-Conducting Bridge memoryにおけるリセットパラメータの相関関係鶴田茂之; 木下健太郎; 長谷川祥; 榎本雄太郎; 岸田悟20122012, vol.112, no.337
微細領域に閉じ込められたReRAMフィラメントのメモリ特性高相圭; 木下健太郎; 福原貴博; 澤居優圭; 岸田悟20122012, vol.112, no.337
金属/TiO_2/金属積層構造の抵抗スイッチング特性に対する電極材料の影響沖元直樹; 岩田達哉; 西佑介; 木本恒暢20122012, vol.112, no.337
電子線照射によるSiCの正孔の各種散乱機構の変化村田耕司; 森根達也; 松浦秀治; 小野田忍; 大島武20122012, vol.112, no.337
超高耐圧SiC PiNダイオードの作製と低オン抵抗化梶直樹; 丹羽弘樹; 須田淳; 木本恒暢20122012, vol.112, no.337
4H-SiC(11-20)面上に形成したMOS界面へのリン導入による界面準位密度の低減効果梅澤奈央; 矢野裕司; 畑山智亮; 冬木隆20122012, vol.112, no.337
イオン液体BMIM-PF_6イオンビーム照射によるガラス基板の表面改質竹内光明; 濱口拓也; 龍頭啓充; 高岡義寛20122012, vol.112, no.337
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