期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



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题名作者出版年年卷期
Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputteringDae-Hee Han; Shun-ichiro Ohmi20132013, vol.113, no.247
Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110)Nithi Atthi; Dae-Hee Han; Shun-ichiro Ohmi20132013, vol.113, no.247
SiCパワーデバイスの開発動向四戸老20132013, vol.113, no.247
原子レベル平坦化Si表面のキャリアモビリティ特性に基づくマルチゲートMOSFETの構造設計黒田理人; 中尾幸久; 寺本章伸; 須川成利; 大見忠弘20132013, vol.113, no.247
内部量子効率100%のPD技術とオンチップ高透過積層膜を組み合わせた紫外光高感度·高信頼性Siフォトダイオード幸田安真; 黒田理人; 中尾幸久; 須川成利20132013, vol.113, no.247
窒素添加LaB_6薄膜のデバイス応用に関する検討前田康貴; 大見俊一郎; 後藤哲也; 大見忠弘20132013, vol.113, no.247
バイアス印加硬X線光電子分光法を用いた絶縁膜/Si界面の評価池野成裕; 永田晃基; 陰地宏; 廣沢一郎; 小椋厚志20132013, vol.113, no.247
古典的分子動力学計算による物理的プラズマダメージ形成機構の検討-Fin型MOSFETでの欠陥生成機構江利口浩二; 松田朝彦; 中久保義則; 鷹尾祥典; 斧高一20132013, vol.113, no.247
積層型不揮発性メモリの設計法渡辺重佳20132013, vol.113, no.247
プラズマチャージングダメージがMOSFFTのRandom Telegraph Noise特性に及ぼす影響亀井政幸; 中久保義則; 鷹尾祥典; 江利口浩二; 斧高一20132013, vol.113, no.247
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