期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



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题名作者出版年年卷期
A novel method for crystallizations of aluminum nitridePeiTsen WU; Mitsuru FUNATO; Yoichi KAWAKAMI20132013, vol.113, no.330
ZrO_2/Al_2O_3積層膜をゲート絶縁膜に用いたn-GaN MISダイオードの界面特性樹神真太郎; 徳田博邦; 葛原正明20132013, vol.113, no.330
350nm紫外LED光取り出し効率改善に関する研究中嶋翼; 竹田健一郎; 岩谷素顕; 上山智; 竹内哲也; 赤﨑勇; 天野浩20132013, vol.113, no.330
GaN-HEMTスイッチング回路における不要電磁波の放射特性の評価井手利英; 鍛冶良作; 清水三聡; 水谷研治; 上野弘明; 大塚信之; 上田哲三; 田中毅20132013, vol.113, no.330
InGaN半導体レーザのワット級高出力化とその応用展開萩野裕幸; 左文字克哉; 吉田真治; 瀧川信一; 森本廉; 瀧澤俊幸; 春日井秀紀; 山中一彦; 片山琢磨20132013, vol.113, no.330
内部集光レーザを用いた窒化物半導体デバイス用基板のそり制御-シリコン基板への応用青田奈津子; 会田英雄; 武田秀俊20132013, vol.113, no.330
InGaN/GaN MQW太陽電池におけるMQW構造最適化に関する考察渡邉則之; 満原学; 横山春喜; 梁剣波; 重川直輝20132013, vol.113, no.330
GaN自立基板上低キャリア厚膜n-GaNショットキー接触の評価塩島謙次; 木原雄平; 青木俊周; 金田直樹; 三島友義20132013, vol.113, no.330
低Mgドープp-GaNショットキー接触のAC動作塩島謙次; 青木俊周; 金田直樹; 三島友義20132013, vol.113, no.330
高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率前川拓也; 本田善央; 天野浩; 西谷智博20132013, vol.113, no.330
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