期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
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题名作者出版年年卷期
Synthesis of various F-doped tin oxide nanostructures on the glass substrate by the atomized spray pyrolysis deposition for DSSC applicationR. M. G. Rajapakse; D. Liyanage; P. V. V. Jayaweera; E. V. A. Premalal; V. M. Mohan; H. M. N. Bandara; Masaru Shimomura; Kenji Murakami20132013, vol.113, no.450
Suppressing the Recombination Rate on DSSC by Forming Blocking LayerR. Winantyo; V. M. Mohan; R. M. G. Rajapakse; K. Murakami20132013, vol.113, no.450
プラスチック基板上におけるn型カーボンナノチューブ薄膜トランジスタの作製と評価安西智洋; 岸本茂; 大野雄高20132013, vol.113, no.450
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高速なフレキソ印刷技術を用いたカーボンナノチューブ薄膜トランジスタの作製樋口健太郎; 中嶋勇太; 外村卓也; 武居正史; 岸本茂; 畑克彦; 大野雄高20132013, vol.113, no.450
直接ギャップ半導体へテロ接合によるトポロジカル絶縁体の実現鈴木恭一; 小野満恒二; 原田裕一; 村木康二20132013, vol.113, no.450
極薄SOI膜のゼーべック係数制御とナノ構造熱電特性測定技術の構築池田浩也; 鈴木悠平; 三輪一聡; ファイズサレ20132013, vol.113, no.450
非対称ゲート制御GaAsナノワイヤによる電子ブラウンラチェットデバイスの特性評価阿部遊子; 田中貴之; 葛西誠也20132013, vol.113, no.450
InAsナノワイヤ／CMOS異種技術融合集積回路の試作道又賢司; 島本一成; 和保孝夫; 荻野雄大; 下村和彦20132013, vol.113, no.450
MOVPE法によるGaN／AlN共鳴トンネルダイオード構造の作製－窒化物量子井戸構造の解析伊藤成顕; ソダーバンルハッサネット; 杉山正和; 中野義昭20132013, vol.113, no.450
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