期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2014, vol.43, no.1 2014, vol.43, no.2 2014, vol.43, no.3 2014, vol.43, no.4 2014, vol.43, no.5 2014, vol.43, no.6
2014, vol.43, no.7 2014, vol.43, no.8

题名作者出版年年卷期
Limitations and Prospects of Using the Two-Phase CMOS Logics in Upset-Immune sub-100-nm VLSIsV. Ya. Stenin20142014, vol.43, no.2
Modeling the Characteristics of Trigger Elements of Two-Phase CMOS Logic, Taking into Account the Charge Sharing Effect under Exposure to Single Nuclear ParticlesYu. V. Katunin; V. Ya. Stenin; P. V. Stepanov20142014, vol.43, no.2
Laser Imitation Simulation behind the Diffraction LimitP. K. Skorobogatov20142014, vol.43, no.2
Selection of Optimal Parameters of Laser Radiation for Simulating Ionization Effects in Silicon Bulk-Technology MicrocircuitsA. Yu. Nikiforov; P. K. Skorobogatov; A. N. Egorov; D. V. Gromov20142014, vol.43, no.2
Transient Radiation Effects in Microwave Monolithic Integrated Circuits Based on Heterostructure Field-Effect Transistors: Experiment and ModelV. V. Elesin20142014, vol.43, no.2
Application of Probabilistic and Fuzzy Models to the Simulation of Radiation Failures of LSI CircuitsV. M. Barbashov; N. S. Trushkin; K. A. Epifantsev20142014, vol.43, no.2
The Hydrogenic-Electron Model of Accumulation of Surface States on the Oxide-Semiconductor Interface under the Effects of Ionizing RadiationA. V. Sogoyan; S. V. Cherepko; V. S. Pershenkov20142014, vol.43, no.2
Evaluation of Multibit Upsets in Integrated Circuits under Heavy Charged ParticlesA. I. Chumakov20142014, vol.43, no.2
Effect of Topological Placement of Memory Cells in Memory Chips on Multiplicity of Cell Upsets from Heavy Charged ParticlesA. B. Boruzdina; N. G. Grigor'ev; A. V. Ulanova20142014, vol.43, no.2



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