期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2014, vol.43, no.1 2014, vol.43, no.2 2014, vol.43, no.3 2014, vol.43, no.4 2014, vol.43, no.5 2014, vol.43, no.6
2014, vol.43, no.7 2014, vol.43, no.8

题名作者出版年年卷期
Nonvolatile Memory Cells Based on the Effect of Resistive Switching in Depth-Graded Ternary Hf_xAl_(1-x)O_y Oxide FilmsO. M. Orlov; A. A. Chuprik; A. S. Baturin; E. S. Gornev; K. V. Bulakh; K. V. Egorov; A. A. Kuzin; D. V. Negrov; S. A. Zaitsev; A. M. Markeev; Yu. Yu. Lebedinskii; A. V. Zablotskii20142014, vol.43, no.4
Investigation of Electrical Properties of MOS Structures with Silicon Nitride Films Doped with Rare Earth ElementsA. A. Kovalevsky; A. S. Strogova; N. S. Strogova; N. V. Babushkina20142014, vol.43, no.4
Verification of the Algorithm for Emission Tomography of Plasma Inhomogeneities in a Plasma-Chemical Reactor Using the Langmuir MultiprobeA. V. Fadeev; K. V. Rudenko20142014, vol.43, no.4
A Virtual Scanning Electron Microscope 3. A Semiempirical Model of the SEM Signal GenerationYu. A. Novikov20142014, vol.43, no.4
Formation of the Architecture of Nanodimensional Polymer Media with Quantum DotsV. Ya. Podvigalkin20142014, vol.43, no.4
High-Mode Wave Reliefs in a Spatially Nonlocal Erosion ModelA. S. Rudyi; A. N. Kulikov; D. A. Kulikov; A. V. Metlitskaya20142014, vol.43, no.4
Investigation into the Diffusion of Boron, Phosphorus, and Arsenic in Silicon during Annealing in a Nonisothermal ReactorV. I. Rudakov; V. V. Ovcharov; V. F. Lukichev; Yu. I. Denisenko20142014, vol.43, no.4
Modification of Electronic Properties of the Surface of (100) Silicon Crystals under Microwave Plasma MicromachiningR. K. Yafarov; S. A. Klimova20142014, vol.43, no.4
Method for Analyzing the Equivalence of X-ray Images of Microcircuits for Estimating the Radiation ResistanceYu. A. Ozhegin20142014, vol.43, no.4



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