期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2015, vol.44, no.1 2015, vol.44, no.2 2015, vol.44, no.3 2015, vol.44, no.4 2015, vol.44, no.5 2015, vol.44, no.6
2015, vol.44, no.7 2015, vol.44, no.8

题名作者出版年年卷期
Rational Methodological Approach to Evaluation of Dose Resistance of CMOS Microcircuits with Respect to Low Intensity EffectsD. V. Boychenko; O. A. Kalashnikov; A. B. Karakozov; A. Yu. Nikiforov20152015, vol.44, no.1
The Impact of Laser Polarization Direction on Local Dose Rate Effects Simulation for Modern Integrated CircuitsP. K. Skorobogatov; A. V. Sogoyan; G. G. Davydov; A. N. Egorov; D. V. Savchenkov20152015, vol.44, no.1
An Evaluation of the Sensitivity of Integrated Circuits to Single Event Effects for the Point Charge Collection AreaA. I. Chumakov20152015, vol.44, no.1
Evaluation of Sensitivity Parameters for Single Event Latchup Effect in CMOS LSI ICs by Pulsed Laser Backside Irradiation TestsA. A. Pechenkin; D. V. Savchenkov; O. B. Mavritskii; A. I. Chumakov; D. V. Bobrovskii20152015, vol.44, no.1
An Analysis of the Temperature Effect on the Impulse Electric Strength of CMOS ChipsK. A. Epifantsev; P. K. Skorobogatov; O. A. Gerasimchuk20152015, vol.44, no.1
Electric Regime Influence on the DC-DC Converters's Hardness to Single Event TransientsL. N. Kessarinskiy; A. Y. Borisov; D. V. Boychenko; A. O. Akhmetov20152015, vol.44, no.1
Function-Logic Simulation of the Degradation of Digital Large-Scale Integrated Circuits under the Influence of RadiationV. M. Barbashov20152015, vol.44, no.1
A Model for the Formation of Leakage Currents in the Dielectrics of MOS Structures under the Effect of Heavy Charged ParticlesA. V. Sogoyan; V. A. Polunin20152015, vol.44, no.1
Optimization of Laser Irradiation Parameters for Simulation of a Transient Radiation Response in Thin-Film Silicon-Based MicrocircuitsP. K. Skorobogatov; A. Yu. Nikiforov; A. N. Egorov20152015, vol.44, no.1



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