期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2015, vol.44, no.1 2015, vol.44, no.2 2015, vol.44, no.3 2015, vol.44, no.4 2015, vol.44, no.5 2015, vol.44, no.6
2015, vol.44, no.7 2015, vol.44, no.8

题名作者出版年年卷期
Simultaneous Activation of the Field-Emission and Secondary-Emission Cathodes of a Magnetron with a Nonincandescent LaunchI. P. Li; V. S. Petrov; V. S. Polyakov; A. D. Silaev; N. E. Ledentsova; A. A. Minin; A. I. Gaidar20152015, vol.44, no.7
Investigating the Formation of Nanostructured Emission Mediums for High-Current Radio-Frequency ElectronicsV. A. Bespalov; E. A. Il'ichev; E. P. Kirilenko; A. I. Kozlitin; A. E. Kuleshov; D. M. Migunov; R. M. Nabiev; G. N. Petrukhin; G. S. Rychkov; O. A. Sakharov; A. I. Trifonov20152015, vol.44, no.7
Investigation into the Plasma Formation of Polysilicon Interconnections on a Complex ReliefV. A. Galperin; N. A. Razzhivin20152015, vol.44, no.7
Electrically Programmable NonVolatile Memory in CMOS TechnologyI. V. Ermakov; N. A. Shelepin20152015, vol.44, no.7
Estimating the Reliability of Aluminum Metallization of Integrated Circuits by Accelerated Electromigration Testing at Constant TemperatureS. O. Safonov; V. P. Bespalov; A. A. Golishnikov; M. G. Putrya20152015, vol.44, no.7
Simulation of the Bosch Process for Micro- and NanostructuresR. A. Mukhamadeev; T. I. Danilina; P. E. Troyan20152015, vol.44, no.7
Investigation of the Physical Processes in BISPIN Structures in Pulsation ModeD. V. Bykov; F. I. Grigor'ev; A. P. Lysenko; N. I. Strogankova20152015, vol.44, no.7
Frequency Multipliers with Improved Suppression of the Secondary Components of the Output SignalD. V. Shekhovtsov; A. I. Mushta; Yu. S. Balashov20152015, vol.44, no.7
Nondestructive Method for Determining the Voltage of Current Pinching in Powerful Radiofrequency and Microwave Bipolar TransistorsV. A. Sergeev; A. A. Kulikov20152015, vol.44, no.7
Development of Integrated Circuits for the Reception Path Based on the SiGe-Heterojunction Bipolar Transistors for the Frequency Range of 57-64 GHzD. A. Koptsev; V. A. Dmitriev20152015, vol.44, no.7
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