期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2015, vol.115, no.100 2015, vol.115, no.101 2015, vol.115, no.102 2015, vol.115, no.103 2015, vol.115, no.104 2015, vol.115, no.106
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2015, vol.115, no.88 2015, vol.115, no.9

题名作者出版年年卷期
TFET(トンネルトランジスタ)のコンパクトモデル実装と超低消費電力回路応用検討田中千加; 外園明; 安達甘奈; 後藤正和; 近藤佳之; 杉崎絵美子; 藤松基彦; 原浩幸; 宮野信治; 櫛田桂一; 川中繁20152015, vol.115, no.191
フィラメント制御による28nm混載メモリ向けReRAM開発早川幸夫; 姫野敦史; 安原隆太郎; 藤井覚; 伊藤理; 川島良男; 池田雄一郎; 川原昭文; 河合賢; 魏志強; 村岡俊作; 島川一彦; 三河巧; 米田慎一20152015, vol.115, no.191
負性容量による急峻スロープトランジスタ(NCFET)の設計指針小林正治; 平本俊郎20152015, vol.115, no.191
原子スイッチを用いた不揮発性論理回路(NPL)およびROM辻幸秀; 白旭; 宮村信; 阪本利司; 多田宗弘; 伴野直樹; 岡本浩一郎; 井口憲幸; 杉井信之; 波田博光20152015, vol.115, no.191
非均等な時間間隔サンプリングされたデータの周波数成分ベクトルを求める演算回路田中優; 梁維焜; 萩原良昭20152015, vol.115, no.191
低消費電力LSI応用へ向けた高移動度III-V/Ge CMOS技術の最近の進展と課題入沢寿史; 池田圭司; 上牟田雄一; 小田穣; 手塚勉; 前田辰郎; 太田裕之; 遠藤和彦20152015, vol.115, no.191
16nm FinFETの容量解析と性能·面積検討岡垣健; 渋谷宏治; 森本薫夫; 塚本康正; 新居清二; 小野沢和徳20152015, vol.115, no.191
低電力混載ReRAM技術植木誠; 田辺昭; 砂村潤; 成廣充; 上嶋和也; 増崎幸治; 古武直也; 満生彰; 武田晃一; 長谷卓; 林喜宏20152015, vol.115, no.191
再構成可能論理回路の設計と構成素子の見積もり嘉藤淳紀; 渡辺重佳; 二宮洋; 小林学; 三浦康之20152015, vol.115, no.191
high-k添加シングルp+Polyゲートを用いた超低リーク用途向け薄膜BOX-SOI CMOS山本芳樹; 槙山秀樹; 山下朋弘; 尾田秀一; 蒲原史朗; 山口泰男; 杉井信之; 水谷朋子; 小林正治; 平本俊郎20152015, vol.115, no.191
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