期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



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题名作者出版年年卷期
Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nmXiao Yu; Jian Kang; Mitsuru Takenaka; Shinichi Takagi20152015, vol.115, no.440
ファンデルワールス接合の作製と量子輸送現象町田友樹; 守谷頼; 佐田洋太; 山口健洋; 荒井美穂; 矢吹直人; 森川生; 増渕覚; 上野啓司20152015, vol.115, no.440
Si上異種半導体集積によるCMOSフォトニクス竹中充; 金栄現; 韓在勲; 亢健; 一宮佑希; 程勇鵬; 朴珍權; 金相賢; 高木信一20152015, vol.115, no.440
最先端テクノロジノードにおける2RWデュアルポートSRAM設計事例新居浩二; 薮内誠; 横山佳巧; 石井雄一郎; 岡垣健; 森本薫夫; 塚本康正; 田中浩司; 田中美紀; 田中信二20152015, vol.115, no.440
次世代垂直磁化MTJを用いた高速·低消費電力のキャッシュメモリ階層技術を持つノーマリーオフプロセッサ池上一隆; 野口紘希; 高谷聡; 鎌田親義; 天野実; 安部恵子; 櫛田桂一; 北川英二; 落合隆夫; 下村尚治; 才田大輔; 川澄篤; 原浩幸; 伊藤順一; 藤田忍20152015, vol.115, no.440
極低ドレイン電圧で急峻なS値を持つPN-Body Tied SOI FET井田次郎20152015, vol.115, no.440
Advanced SPCプロセスにより形成された高移動度poly-Siナノワイヤトランジスタにおける電気輸送特性小田穣; 佐久間究; 上牟田雄一; 齋藤真澄20152015, vol.115, no.440
トンネルトランジスタにおけるBTIの理解水林亘; 森貴洋; 福田浩一; 石川由紀; 森田行則; 右田真司; 太田裕之; 柳永勛; 大内真一; 塚田順一; 山内洋美; 松川貴; 昌原明植; 遠藤和彦20152015, vol.115, no.440



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