期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2015, vol.115, no.100 2015, vol.115, no.101 2015, vol.115, no.102 2015, vol.115, no.103 2015, vol.115, no.104 2015, vol.115, no.106
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2015, vol.115, no.88 2015, vol.115, no.9

题名作者出版年年卷期
A Low-Power 64Gb MLC NAND-Flash Memory in 15nm CMOS TechnologyMario Sako; Yoshihisa Watanabe; Takao Nakajima; Jumpei Sato; Kazuyoshi Muraoka; Masaki Fujiu; Fumihiro Kouno; Michio Nakagawa; Masami Masuda; Koji Kato; Yuri Terada20152015, vol.115, no.6
A 2.4 pJ Ferroelectric-Based Non-Volatile Flip-Flop with 10-Year Data Retention CapabilityHiromitsu KIMURA; Takaaki FUCHIKAMI; Kyoji MARUMOTO; Yoshikazu FUJIMORI; Shintaro IZUMI; Hiroshi KAWAGUCHI; Masahiko YOSHIMOTO20152015, vol.115, no.6
An 1800-Times-Higher Power-Efficient 20k-spin Ising Chip for Combinatorial Optimization Problem with CMOS AnnealingMasanao YAMAOKA; Chihiro YOSHIMURA; Masato HAYASHI; Takuya OKUYAMA; Hidetaka AOKI; Hiroyuki MIZUNO20152015, vol.115, no.6
20nmプロセスにおける高密度SRAMのワード線調整アシスト回路システム藪内誠; 塚本康正; 森本薫夫; 田中美紀; 新居浩二20152015, vol.115, no.6
車載用途200MHz高速読出し動作および書込みスループット2.0MB／sを達成した28nm混載SG-MONOSフラッシュマクロの開発棟安誠; 帯刀恭彦; 中野全也; 伊藤孝; 河野隆司; 野口健二; 日高秀人; 山内忠昭20152015, vol.115, no.6
アーカイブとエンタープライズストレージに向けた高信頼TLC NANDフラッシュソリッド·ステート·ドライブ蜂谷尚悟; 田中丸周平; 徳冨司; 土井雅史; 北村雄太; 山崎泉樹; 小林惇朗; 竹内健20152015, vol.115, no.6
Ge欠損系超格子を用いたTopological-switching random access memory（TRAM）高浦則克20152015, vol.115, no.6
Vtキャンセル書込方法を用いた結晶性In-Ga-Zn Oxide FETによる128kb 4bit／cell不揮発性メモリ松嵜隆徳; 大貫達也; 長塚修平; 井上広樹; 石津貴彦; 家田義紀; 坂倉真之; 熱海知昭; 塩野入豊; 加藤清; 小山潤; 奥田高; 山元良高; 藤田昌宏; 山崎舜平20152015, vol.115, no.6
キャッシュメモリ向け垂直磁化型STT-MRAMの低電力化技術野口紘希; 池上一隆; 櫛田桂一; 安部恵子; 板井翔吾; 高谷聡; 田中千加; 鎌田親義; 天野実; 北川英二; 下村尚治; 川澄篤; 原浩幸; 伊藤順一; 藤田忍20152015, vol.115, no.6
不揮発ロジックインメモリアーキテクチャとその低電力VLSIシステムへの応用羽生貴弘; 鈴木大輔; 望月明; 夏井雅典; 鬼沢直哉; 杉林直彦; 池田正二; 遠藤哲郎; 大野英男20152015, vol.115, no.6
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