期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2015, vol.115, no.100 2015, vol.115, no.101 2015, vol.115, no.102 2015, vol.115, no.103 2015, vol.115, no.104 2015, vol.115, no.106
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2015, vol.115, no.88 2015, vol.115, no.9

题名作者出版年年卷期
Fabrication of Cu_2O/Fe-O heterojunction solar cells by electrodepositionChaolong ZHANG; Junie Jhon M. VEQUIZO; Masaya ICHIMURA20152015, vol.115, no.65
SiC基板表面における浸漬法による自己組織化膜形成-Study on self-assembled monolayers by the immersion method on SiC substrate鈴木悠矢; 広瀬雄治; 玉置祥平; 宮川鈴衣奈; 木下隆利; 江龍修20152015, vol.115, no.65
液体原料を用いた熱CVDによるグラフェンの合成岸直希; 岩田鷹明; 岩間一樹; 包建峰; 劉会濤; 曽我哲夫20152015, vol.115, no.65
分子線エピタキシー法により成長したInGdNナノプレートの光学特性光野徹也; 酒井優; 岸野克巳; 原和彦20152015, vol.115, no.65
表面窒化を用いたGaAsN混晶のN組成制御浦上法之; 山根啓輔; 関口寛人; 岡田浩; 若原昭浩20152015, vol.115, no.65
コランダム構造酸化物半導体の成長とMOSFET試作伊藤義人; 金子健太郎; 藤田静雄20152015, vol.115, no.65
高移動度β-Ga_2O_3(-201)単結晶を用いたショットキーバリアダイオードの作製古賀優太; 原田和也; 花田賢志; 大石敏之; 嘉数誠20152015, vol.115, no.65
浮遊電極測定を用いたGANショットキーバリアダイオードの順方向特性の解析山口修造; 大石敏之; 山口裕太郎; 山中宏治20152015, vol.115, no.65
Al_2O_3絶縁膜を有するNO_2吸着H終端処理ダイヤモンドFETのデバイスシミュレーション大石敏之; 東竜太郎; 原田和也; 古賀優太; 平間一行; 嘉数誠20152015, vol.115, no.65
自由電子レーザー照射による面内配向単層カーボンナノチューブのカイラリティ制御の可能性川口大貴; 吉田圭佑; 小林弥生; 春宮清之介; 永田知子; 山本寛; 岩田展幸20152015, vol.115, no.65
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