期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
［招待講演］低仕事関数金属界面制御層を用いた有機半導体トランジスタのデバイス特性大見俊一郎; 前田康貴; 古山脩; 廣木瑞葉20162016, vol.116, no.1
固液界面におけるチトクロームcの固定化と直接電子移動反応に対する表面修飾の効果松田直樹; 岡部浩隆20162016, vol.116, no.1
［招待講演］メソスコピック寸法のλ-DNA/SiO_2／Si構造における正孔の非クーロンブロケード／ステアケース現象松尾直人; 高田忠雄; 部家彰; 山名一成; 佐藤且; 横山新; 大村泰久20162016, vol.116, no.1
［招待講演］Sn系IV族半導体混晶薄膜の成長と物性評価志村洋介; 竹内和歌奈; 坂下満男; 黒澤昌志; 中塚理; 財満鎮明20162016, vol.116, no.1
絶縁基板上における高Sn濃度（>10%）GeSn薄膜結晶の形成茂藤健太; 松村亮; 佐道泰造; 池上浩; 宮尾正信20162016, vol.116, no.1
金属誘起横方向成長法によるSnドープGe／絶縁基板の低温形成酒井崇嗣; 松村亮; 佐道泰造; 宮尾正信20162016, vol.116, no.1
非熱的エネルギーを用いた非晶質Ge／SiO_2の低温固相成長草野欽太; 工藤和樹; 塘内功大; 坂口大成; 茂藤健太; 本山慎一; 楠田豊; 古田真浩; 中庸行; 沼田朋子; 高倉健一郎; 角田功20162016, vol.116, no.1
大気圧マイクロ熱プラズマジェット結晶化ゲルマニウム膜の電気特性評価及び高性能薄膜トランジスタの作製中谷太一; 原田大夢; 東清一郎20162016, vol.116, no.1
スパッタSi膜へのマルチショットELAとメタルソース·ドレイン構造TFT原田大成; 我喜屋風太; 安次富卓哉; 岡田竜弥; 野口隆; 野田勘治; 諏訪輝; 池上浩; 奥山哲雄20162016, vol.116, no.1
パネル上システムのための青色半導体レーザアニーリングにより形成された高光伝導性シリコン薄膜コスワッタゲーチャリットジャヤナダ; 中尾浩太; 岡田竜弥; 野口隆20162016, vol.116, no.1
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