期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2016, vol.116, no.1 2016, vol.116, no.100 2016, vol.116, no.102 2016, vol.116, no.103 2016, vol.116, no.114 2016, vol.116, no.118
2016, vol.116, no.122 2016, vol.116, no.129 2016, vol.116, no.13 2016, vol.116, no.136 2016, vol.116, no.139 2016, vol.116, no.15
2016, vol.116, no.151 2016, vol.116, no.153 2016, vol.116, no.154 2016, vol.116, no.155 2016, vol.116, no.156 2016, vol.116, no.157
2016, vol.116, no.159 2016, vol.116, no.163 2016, vol.116, no.166 2016, vol.116, no.167 2016, vol.116, no.168 2016, vol.116, no.169
2016, vol.116, no.172 2016, vol.116, no.173 2016, vol.116, no.175 2016, vol.116, no.179 2016, vol.116, no.185 2016, vol.116, no.190
2016, vol.116, no.191 2016, vol.116, no.192 2016, vol.116, no.193 2016, vol.116, no.194 2016, vol.116, no.195 2016, vol.116, no.204
2016, vol.116, no.206 2016, vol.116, no.207 2016, vol.116, no.21 2016, vol.116, no.212 2016, vol.116, no.215 2016, vol.116, no.216
2016, vol.116, no.217 2016, vol.116, no.219 2016, vol.116, no.229 2016, vol.116, no.235 2016, vol.116, no.241 2016, vol.116, no.242
2016, vol.116, no.246 2016, vol.116, no.248 2016, vol.116, no.254 2016, vol.116, no.255 2016, vol.116, no.260 2016, vol.116, no.261
2016, vol.116, no.269 2016, vol.116, no.270 2016, vol.116, no.271 2016, vol.116, no.272 2016, vol.116, no.274 2016, vol.116, no.275
2016, vol.116, no.28 2016, vol.116, no.283 2016, vol.116, no.288 2016, vol.116, no.289 2016, vol.116, no.296 2016, vol.116, no.297
2016, vol.116, no.3 2016, vol.116, no.301 2016, vol.116, no.302 2016, vol.116, no.31 2016, vol.116, no.310 2016, vol.116, no.311
2016, vol.116, no.315 2016, vol.116, no.32 2016, vol.116, no.326 2016, vol.116, no.33 2016, vol.116, no.330 2016, vol.116, no.333
2016, vol.116, no.334 2016, vol.116, no.338 2016, vol.116, no.344 2016, vol.116, no.349 2016, vol.116, no.35 2016, vol.116, no.352
2016, vol.116, no.353 2016, vol.116, no.355 2016, vol.116, no.357 2016, vol.116, no.358 2016, vol.116, no.359 2016, vol.116, no.360
2016, vol.116, no.363 2016, vol.116, no.364 2016, vol.116, no.367 2016, vol.116, no.368 2016, vol.116, no.369 2016, vol.116, no.371
2016, vol.116, no.372 2016, vol.116, no.377 2016, vol.116, no.380 2016, vol.116, no.388 2016, vol.116, no.389 2016, vol.116, no.390
2016, vol.116, no.391 2016, vol.116, no.394 2016, vol.116, no.410 2016, vol.116, no.415 2016, vol.116, no.419 2016, vol.116, no.420
2016, vol.116, no.421 2016, vol.116, no.423 2016, vol.116, no.432 2016, vol.116, no.436 2016, vol.116, no.439 2016, vol.116, no.441
2016, vol.116, no.444 2016, vol.116, no.445 2016, vol.116, no.446 2016, vol.116, no.448 2016, vol.116, no.450 2016, vol.116, no.453
2016, vol.116, no.457 2016, vol.116, no.458 2016, vol.116, no.459 2016, vol.116, no.463 2016, vol.116, no.465 2016, vol.116, no.467
2016, vol.116, no.472 2016, vol.116, no.475 2016, vol.116, no.478 2016, vol.116, no.482 2016, vol.116, no.486 2016, vol.116, no.487
2016, vol.116, no.49 2016, vol.116, no.492 2016, vol.116, no.494 2016, vol.116, no.5 2016, vol.116, no.50 2016, vol.116, no.502
2016, vol.116, no.504 2016, vol.116, no.505 2016, vol.116, no.51 2016, vol.116, no.513 2016, vol.116, no.519 2016, vol.116, no.52
2016, vol.116, no.523 2016, vol.116, no.524 2016, vol.116, no.529 2016, vol.116, no.54 2016, vol.116, no.55 2016, vol.116, no.56
2016, vol.116, no.6 2016, vol.116, no.61 2016, vol.116, no.63 2016, vol.116, no.68 2016, vol.116, no.69 2016, vol.116, no.70
2016, vol.116, no.77 2016, vol.116, no.81 2016, vol.116, no.84 2016, vol.116, no.86 2016, vol.116, no.91 2016, vol.116, no.93
2016, vol.116, no.94 2016, vol.116, no.98 2016, vol.116, no.99

题名作者出版年年卷期
［依頼講演］強誘電体HfSiOキャパシタにおける形成プロセスと膜物性·電気特性の関係上牟田雄一; 藤井章輔; 高石理一郎; 井野恒洋; 中崎靖; 齋藤真澄; 小山正人20162016, vol.116, no.118
強誘電体ナノワイヤキャパシタの作製－高集積強誘電体メモリへの応用を目指して藤沢浩訓; 清水勝; 中嶋誠二20162016, vol.116, no.118
多段積層型トランジスタ構造を用いたFe-FET NAND論理の提案とそのロジックLSIへの適応検討渡辺重佳; 横田智広20162016, vol.116, no.118
ZrO_2／Al_2O_3／ZrO_2多層を用いたDRAMキャパシタにおけるAl_2O_3層が電気特性に及ぼす効果女屋崇; 生田目俊秀; 澤田朋実; 栗島一徳; 澤本直美; 大井暁彦; 知京豊裕; 小椋厚志20162016, vol.116, no.118
SiO_2の絶縁破壊と局所陽極酸化を用いた抵抗変化デバイス角嶋邦之; 若林整; 筒井一生; 岩井洋20162016, vol.116, no.118
Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価金田裕一; 兼松正行; 坂下満男; 竹内和歌奈; 中塚理; 財満鎭明20162016, vol.116, no.118
XPSによるSiO_2／半導体界面の電位変化およびダイポールの定量藤村信幸; 大田晃生; 渡辺浩成; 牧原克典; 宮崎誠一20162016, vol.116, no.118
リモート酸素プラズマ支援CVDによる低温SiO_2薄膜形成グェンスァンチュン; 藤村信幸; 竹内大智; 大田晃生; 牧原克典; 池田弥央; 宮崎誠一20162016, vol.116, no.118
タンタル酸ナノシート／SiO_2／Si界面バンドオフセットにおけるUV照射の効果速水脩平; 豊田智史; 福田勝利; 菅谷英生; 森田将史; 中田明良; 内本喜晴; 松原英一郎20162016, vol.116, no.118
HfO_2基強誘電体薄膜の作製と特性評価舟窪浩; 清水荘雄; 片山きりは; 三村和仙20162016, vol.116, no.118
12



制造业外文文献服务平台