期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
3D stacked Sensor/Detector Technology using less than 5μm Pitch Micro-Bump ConnectionsMakoto Motoyoshi20162016, vol.116, no.172
Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTFHiroki Takahashi; Hiroshi Tanaka; Masahiro Oda; Mitsuyoshi Ando; Naoto Niisoe; Shinichi Kawai; Takuya Asano; Mitsugu Yoshita; Tohru Yamada20162016, vol.116, no.172
A 0.7V 1.5-to-2.3mW GNSS Receiver with 2.5-to-3.8dB NF in 28nm FD-SOIKen Yamamoto; Kenichi Nakano; Gaku Hidai; Yuya Kondo; Hitoshi Tomiyama; Hideyuki Takano; Fumitaka Kondo; Yusuke Shinohe; Hidenori Takeuchi; Nobuhisa Ozawa; Shingo Harada; Shinichiro Eto; Mari Kishikawa; Daisuke Ide; Hiroyasu Tagami; Masayuki Katakura; Norio Shoji20162016, vol.116, no.172
A Low-Power Mixed-Domain Delta-Sigma Time-to-Digital Converter Using Charge-Pump and SAR ADCAnugerah FIRDAUZI; Zule XU; Masaya MIYAHARA; Akira MATSUZAWA20162016, vol.116, no.172
機能安全規格ISO26262 ASIL Bに対応する16nm FinFETへテロジニアス9コアSoC高橋睦史; 芝原真一; 福岡一樹; 松嶋潤; 北地祐子; 島崎靖久; 原博隆; 大田隆宏20162016, vol.116, no.172
SOTBトランジスタの柔軟な閾値制御と低ばらつきが超低電圧動作に与える効果の定量的検証小笠原泰弘20162016, vol.116, no.172
ボディ電圧1V以下ドレイン電圧0.1Vで急峻なSSを持つPN-Body Tied SOI FET吉田貴大; 井田次郎; 堀井隆史; 沖原将生; 新井康夫20162016, vol.116, no.172
線幅2nmの超微細シリコンナノワイヤトランジスタにおけるDIBLばらつきおよびデバイス内ばらつき水谷朋子; 竹内潔; 鈴木龍太; 更屋拓哉; 小林正治; 平本俊郎20162016, vol.116, no.172
負性容量によるトンネルFETの性能向上に関する検討小林正治; チャンキュンミン; 上山望; 平本俊郎20162016, vol.116, no.172
電圧制御型Ring-Delay Lineを用いた2次デルタシグマA/D変換器羅晳珍; 池辺将之; 内田大輔; 横山紗由里; 佐野栄一; 木下康大20162016, vol.116, no.172
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