期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

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2006 2007 2008 2009 2010 2011
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2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTFHiroki Takahashi; Hiroshi Tanaka; Masahiro Oda; Mitsuyoshi Ando; Naoto Niisoe; Shinichi Kawai; Takuya Asano; Mitsugu Yoshita; Tohru Yamada20162016, vol.116, no.270
[Invited] Low-Noise Imaging Techniques for scientific CMOS Image SensorsMin-Woong Seo; Shoji Kawahito20162016, vol.116, no.270
［招待講演］超低電圧0.4V動作SOTB-CMOS回路のダイ間遅延ばらつきを抑制する基板バイアス制御技術槇山秀樹; 山本芳樹; 長谷川拓実; 岡西忍; 前川径一; 新川田裕樹; 蒲原史朗; 杉井信之; 石橋孝一郎; 水谷朋子; 平本俊郎; 山口泰男20162016, vol.116, no.270
［招待講演］最先端LSIプロセスにおける重金属汚染の制御嵯峨幸一郎20162016, vol.116, no.270
［依頼講演］基板バイアス技術を用いたSOTB 2Mbit SRAMの超低電圧動作山本芳樹; 槇山秀樹; 長谷川拓実; 岡西忍; 前川径一; 新川田裕樹; 蒲原史朗; 山口泰男; 杉井信之; 水谷朋子; 平本俊郎20162016, vol.116, no.270
原子層堆積法で成膜したAl_2O_3膜界面に及ぼす酸化種の影響齋藤雅也; 諏訪智之; 寺本章伸; 黒田理人; 幸田安真; 杉田久哉; 林真里恵; 土本淳一; 石井秀和; 志波良信; 白井泰雪; 須川成利20162016, vol.116, no.270
SiO_2上におけるウェットプロセスがペンタセン薄膜形成に与える影響前田康貴; 廣木瑞葉; 大見俊一郎20162016, vol.116, no.270
動作電圧変化時の過渡状態におけるランダムテレグラフノイズの挙動に関する研究間脇武蔵; 寺本章伸; 黒田理人; 市野真也; 後藤哲也; 諏訪智之; 須川成利20162016, vol.116, no.270
Si基板表面平坦化によるHf系MONOS構造の電気特性向上に関する検討工藤聡也; 大見俊一郎20162016, vol.116, no.270
高濃度ドーピングされた（100）方位SOIウェーハに対するSi選択エピタキシャル成長後の平坦な表面形成技術古川貴一; 寺本章伸; 黒田理人; 諏訪智之; 橋本圭市; 須川成利; 鈴木大介; 千葉洋一郎; 石井勝利; 清水亮; 長谷部一秀20162016, vol.116, no.270



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