期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2016, vol.116, no.1 2016, vol.116, no.100 2016, vol.116, no.102 2016, vol.116, no.103 2016, vol.116, no.114 2016, vol.116, no.118
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题名作者出版年年卷期
Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cellsSong Zhang; Yasuaki Yishikawa; Itaru Raifuku; Tiphaine Bourgeteau; Yukiharu Uraoka; Erik Johnson; Martin Foldyna; Yvan Bonnassieux; Pere Roca i Cabarrocas20162016, vol.116, no.355
ミストCVD法で作製したGaSnO薄膜の特性評価福嶋大貴; 弓削政博; 木村睦; 松田時宜20162016, vol.116, no.355
新規レアメタルフリーAOS TFTの研究開発梅田鉄馬; 加藤雄太; 西本大樹; 松田時宜; 木村睦20162016, vol.116, no.355
IGZO薄膜素子の磁気抵抗効果に対する電極の影響符川明日香; 野村竜生; 松田時宜; 木村睦20162016, vol.116, no.355
GaSnO膜のHall効果測定今西恒太; 符川明日香; 松田時宜; 木村睦20162016, vol.116, no.355
薄膜生体刺激デバイスのin-vitro実験冨岡圭佑; 三宅康平; 松田時宜; 木村睦20162016, vol.116, no.355
薄膜コイルを用いたワイヤレス電力伝送山本友稀; 三澤慶悟; 松田時宜; 木村睦20162016, vol.116, no.355
金属酸化物抵抗変化型メモリにおけるデータ保持特性の外部ストレス耐性木下健太郎20162016, vol.116, no.355
第一原理計算による多結晶酸化物薄膜の抵抗変化メカニズムの検討森山拓洋; 肥田聡太; 山崎隆浩; 大野隆央; 岸田悟; 木下健太郎20162016, vol.116, no.355
自己整合四端子平面型メタルダブルゲート低温poly-Si TFTから成るガラス上のCMOSインバータ大澤弘樹; 原明人20162016, vol.116, no.355
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