期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2016, vol.116, no.1 2016, vol.116, no.100 2016, vol.116, no.102 2016, vol.116, no.103 2016, vol.116, no.114 2016, vol.116, no.118
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题名作者出版年年卷期
Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-stratesKenji SHIOJIMA; Moe NAGANAWA; Tomoyoshi MISHIMA20162016, vol.116, no.357
テラヘルツ時間領域分光エリプソメトリーによるワイドギャップ半導体の電気特性評価藤井高志; 達紘平; 荒木努; 名西憓之; 岩本敏志; 佐藤幸徳; 長島健20162016, vol.116, no.357
sapphire基板上へのコランダム構造酸化ガリウムの成長と電気特性制御赤岩和明; 市野邦男; 金子健太郎; 藤田静雄20162016, vol.116, no.357
GaN自立基板上InAlN/AlN/GaNヘテロ構造に形成したNi/Auショットキー接合の電流-電圧特性小谷淳二; 山田敦史; 石黒哲郎; 中村哲一20162016, vol.116, no.357
ラマン散乱分光法および赤外反射分光法によるGaN自立基板の評価鐘ヶ江一孝; 金子光顕; 木本恒暢; 堀田昌宏; 須田淳20162016, vol.116, no.357
キャリア数によるGaN HEMT素子のコラプス評価大麻浩平; 吉岡啓; 齊藤泰伸; 菊地拓雄; 大黒達也; 浜本毅司; 杉山亨20162016, vol.116, no.357
プレーナ型GaN MOS-HFETのノーマリオフ動作南條拓真; 林田哲郎; 小山英寿; 今井章文; 古川彰彦; 山向幹雄20162016, vol.116, no.357
AlGaN/GaN HEMTの高耐圧·大電流化に関する検討鈴木雄大; 山崎泰誠; 牧野伸哉; Joel T.Asubar; 徳田博邦; 葛原正明20162016, vol.116, no.357
三次元フィールドプレートを用いたAlGaN/GaN HEMTの電流コラプス抑制鈴木敦也; Joel T.Asubar; 徳田博邦; 葛原正明20162016, vol.116, no.357
電気化学加工技術を利用したAlGaN/GaNヘテロ構造の低損傷リセスエッチング熊崎祐介; 植村圭佑; 佐藤威友20162016, vol.116, no.357
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