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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
收藏年代
2000~2024
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2016, vol.116, no.1
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题名
作者
出版年
年卷期
Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates
Kenji SHIOJIMA; Moe NAGANAWA; Tomoyoshi MISHIMA
2016
2016, vol.116, no.357
テラヘルツ時間領域分光エリプソメトリーによるワイドギャップ半導体の電気特性評価
藤井高志; 達紘平; 荒木努; 名西憓之; 岩本敏志; 佐藤幸徳; 長島健
2016
2016, vol.116, no.357
sapphire基板上へのコランダム構造酸化ガリウムの成長と電気特性制御
赤岩和明; 市野邦男; 金子健太郎; 藤田静雄
2016
2016, vol.116, no.357
GaN自立基板上InAlN/AlN/GaNヘテロ構造に形成したNi/Auショットキー接合の電流-電圧特性
小谷淳二; 山田敦史; 石黒哲郎; 中村哲一
2016
2016, vol.116, no.357
ラマン散乱分光法および赤外反射分光法によるGaN自立基板の評価
鐘ヶ江一孝; 金子光顕; 木本恒暢; 堀田昌宏; 須田淳
2016
2016, vol.116, no.357
キャリア数によるGaN HEMT素子のコラプス評価
大麻浩平; 吉岡啓; 齊藤泰伸; 菊地拓雄; 大黒達也; 浜本毅司; 杉山亨
2016
2016, vol.116, no.357
プレーナ型GaN MOS-HFETのノーマリオフ動作
南條拓真; 林田哲郎; 小山英寿; 今井章文; 古川彰彦; 山向幹雄
2016
2016, vol.116, no.357
AlGaN/GaN HEMTの高耐圧·大電流化に関する検討
鈴木雄大; 山崎泰誠; 牧野伸哉; Joel T.Asubar; 徳田博邦; 葛原正明
2016
2016, vol.116, no.357
三次元フィールドプレートを用いたAlGaN/GaN HEMTの電流コラプス抑制
鈴木敦也; Joel T.Asubar; 徳田博邦; 葛原正明
2016
2016, vol.116, no.357
電気化学加工技術を利用したAlGaN/GaNヘテロ構造の低損傷リセスエッチング
熊崎祐介; 植村圭佑; 佐藤威友
2016
2016, vol.116, no.357
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