期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2016, vol.116, no.1 2016, vol.116, no.100 2016, vol.116, no.102 2016, vol.116, no.103 2016, vol.116, no.114 2016, vol.116, no.118
2016, vol.116, no.122 2016, vol.116, no.129 2016, vol.116, no.13 2016, vol.116, no.136 2016, vol.116, no.139 2016, vol.116, no.15
2016, vol.116, no.151 2016, vol.116, no.153 2016, vol.116, no.154 2016, vol.116, no.155 2016, vol.116, no.156 2016, vol.116, no.157
2016, vol.116, no.159 2016, vol.116, no.163 2016, vol.116, no.166 2016, vol.116, no.167 2016, vol.116, no.168 2016, vol.116, no.169
2016, vol.116, no.172 2016, vol.116, no.173 2016, vol.116, no.175 2016, vol.116, no.179 2016, vol.116, no.185 2016, vol.116, no.190
2016, vol.116, no.191 2016, vol.116, no.192 2016, vol.116, no.193 2016, vol.116, no.194 2016, vol.116, no.195 2016, vol.116, no.204
2016, vol.116, no.206 2016, vol.116, no.207 2016, vol.116, no.21 2016, vol.116, no.212 2016, vol.116, no.215 2016, vol.116, no.216
2016, vol.116, no.217 2016, vol.116, no.219 2016, vol.116, no.229 2016, vol.116, no.235 2016, vol.116, no.241 2016, vol.116, no.242
2016, vol.116, no.246 2016, vol.116, no.248 2016, vol.116, no.254 2016, vol.116, no.255 2016, vol.116, no.260 2016, vol.116, no.261
2016, vol.116, no.269 2016, vol.116, no.270 2016, vol.116, no.271 2016, vol.116, no.272 2016, vol.116, no.274 2016, vol.116, no.275
2016, vol.116, no.28 2016, vol.116, no.283 2016, vol.116, no.288 2016, vol.116, no.289 2016, vol.116, no.296 2016, vol.116, no.297
2016, vol.116, no.3 2016, vol.116, no.301 2016, vol.116, no.302 2016, vol.116, no.31 2016, vol.116, no.310 2016, vol.116, no.311
2016, vol.116, no.315 2016, vol.116, no.32 2016, vol.116, no.326 2016, vol.116, no.33 2016, vol.116, no.330 2016, vol.116, no.333
2016, vol.116, no.334 2016, vol.116, no.338 2016, vol.116, no.344 2016, vol.116, no.349 2016, vol.116, no.35 2016, vol.116, no.352
2016, vol.116, no.353 2016, vol.116, no.355 2016, vol.116, no.357 2016, vol.116, no.358 2016, vol.116, no.359 2016, vol.116, no.360
2016, vol.116, no.363 2016, vol.116, no.364 2016, vol.116, no.367 2016, vol.116, no.368 2016, vol.116, no.369 2016, vol.116, no.371
2016, vol.116, no.372 2016, vol.116, no.377 2016, vol.116, no.380 2016, vol.116, no.388 2016, vol.116, no.389 2016, vol.116, no.390
2016, vol.116, no.391 2016, vol.116, no.394 2016, vol.116, no.410 2016, vol.116, no.415 2016, vol.116, no.419 2016, vol.116, no.420
2016, vol.116, no.421 2016, vol.116, no.423 2016, vol.116, no.432 2016, vol.116, no.436 2016, vol.116, no.439 2016, vol.116, no.441
2016, vol.116, no.444 2016, vol.116, no.445 2016, vol.116, no.446 2016, vol.116, no.448 2016, vol.116, no.450 2016, vol.116, no.453
2016, vol.116, no.457 2016, vol.116, no.458 2016, vol.116, no.459 2016, vol.116, no.463 2016, vol.116, no.465 2016, vol.116, no.467
2016, vol.116, no.472 2016, vol.116, no.475 2016, vol.116, no.478 2016, vol.116, no.482 2016, vol.116, no.486 2016, vol.116, no.487
2016, vol.116, no.49 2016, vol.116, no.492 2016, vol.116, no.494 2016, vol.116, no.5 2016, vol.116, no.50 2016, vol.116, no.502
2016, vol.116, no.504 2016, vol.116, no.505 2016, vol.116, no.51 2016, vol.116, no.513 2016, vol.116, no.519 2016, vol.116, no.52
2016, vol.116, no.523 2016, vol.116, no.524 2016, vol.116, no.529 2016, vol.116, no.54 2016, vol.116, no.55 2016, vol.116, no.56
2016, vol.116, no.6 2016, vol.116, no.61 2016, vol.116, no.63 2016, vol.116, no.68 2016, vol.116, no.69 2016, vol.116, no.70
2016, vol.116, no.77 2016, vol.116, no.81 2016, vol.116, no.84 2016, vol.116, no.86 2016, vol.116, no.91 2016, vol.116, no.93
2016, vol.116, no.94 2016, vol.116, no.98 2016, vol.116, no.99

题名作者出版年年卷期
General relationship for cation and anion doping effects on ferroelectric HfO_2 formationL. Xu; S. Shibayama; K. Izukashi; T. Nishimura; T. Yajima; S. Migita; A. Toriumi20162016, vol.116, no.448
［招待講演］サブ10nm世代負性容量FinFETのデバイスシミュレーション太田裕之; 池上勉; 服部淳一; 福田浩一; 右田真司; 鳥海明20162016, vol.116, no.448
［招待講演］等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上森貴洋; 浅井栄大; 服部淳一; 福田浩一; 大塚慎太郎; 森田行則; 大内真一; 更田裕司; 右田真司; 水林亘; 太田裕之; 松川貴20162016, vol.116, no.448
［招待講演］16／14nmノード以降における高速かつ高信頼性を有する混載フラッシュメモリ向けFinFET Split-Gate MONOS津田是文; 川嶋祥之; 園田賢一郎; 吉富敦司; 三原竜善; 鳴海俊一; 井上真雄; 村中誠志; 丸山隆弘; 山下朋弘; 山口泰男; 久本大20162016, vol.116, no.448
［招待講演］電圧トルクMRAM（VCM）向け読み出し／書き込み回路と大容量キャッシュメモリへの応用塩田陽一; 野口紘希; 池上一隆; 安部恵子; 藤田忍; 野崎隆行; 湯浅新治; 鈴木義茂20162016, vol.116, no.448
［招待講演］超低消費エネルギーと高集積性を併せ持っ電圧制御スピントロニクスメモリ－（Ultra-low Energy Consumption High-Density VoCSM）奥田博明; 下村尚治; 大沢裕一; 白鳥聡志; 加藤侑志; 井口智明; 上口裕三; ブヤンダライアルタンサガイ; 斉藤好昭; 鴻井克彦; 杉山英行; 及川壮一; 清水真理子; 石川瑞恵; 池上一隆; 黒部篤20162016, vol.116, no.448
［招待講演］多様化するアナログ信号処理に向けた新規機能性受動素子－VO_2揮発性スイッチの作製と応用矢嶋赳彬; 西村知紀; 鳥海明20162016, vol.116, no.448
［招待講演］Ge／III-V族半導体を用いたトンネルFET技術高木信一; 安大煥; 野口宗隆; 後藤高寛; 西康一; 金閔洙; 竹中充一20162016, vol.116, no.448
［招待講演］Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO_2小林正治; 上山望; 蔣京珉; 平本俊郎20162016, vol.116, no.448



制造业外文文献服务平台