期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2017, vol.46, no.1 2017, vol.46, no.2 2017, vol.46, no.3 2017, vol.46, no.4 2017, vol.46, no.5 2017, vol.46, no.6
2017, vol.46, no.7 2017, vol.46, no.8

题名作者出版年年卷期
Simulating the Chlorine Plasma Etching Profile of High-Aspect-Ratio Trenches in SiA. S. Shumilov; I. I. Amirov; V. F. Luckichev20172017, vol.46, no.5
Peculiarities of the Energy Landscape of a Rectangular Magnetic NanoislandO. S. Trushin; N. I. Barabanova20172017, vol.46, no.5
Nonalloyed Ohmic Contacts for High-Electron-Mobility Transistors Based on AlGaN/GaN HeterostructuresA. Yu. Pavlov; V. Yu. Pavlov; D. N. Slapovskiy; S. S. Arutyunyan; Yu. V. Fedorov; P. P. Mal'tsev20172017, vol.46, no.5
Effect of Diamond Dicing of SiC Device Wafers on the Technical and Operational Parameters of Monolithic Integrated CircuitsS. A. Gamkrelidze; A. A. Trofimov; N. V. Shchavruk20172017, vol.46, no.5
Silicide Iridium Sensors Based on Solid Sensitive ElementsE. A. Kerimov; S. N. Musaeva20172017, vol.46, no.5
Organizing the Memory Array of Multiport Register Files to Reduce Power ConsumptionL. A. Solovyeva; P. G. Kirichenko20172017, vol.46, no.5
Low-Noise Amplifier for the Range of 57-64 GHz with Grounding Holes through Photolake LayerD. V. Krapukhin; P. P. Mal'tsev20172017, vol.46, no.5
Investigation of the Features of Integrating Nonvolatile FRAM Elements with CMOS TechnologyO. M. Orlov; D. D. Voronov; R. A. Izmailov; G. Ya. Krasnikov20172017, vol.46, no.5
Modeling SiO_2 Leakage Currents Caused by Electrical OverloadsV. A. Polunin20172017, vol.46, no.5
Small-Signal Optimization Approach to Design of Microwave Signal Switch ICs on MOS TransistorsV. V. Elesin; G. N. Nazarova; N. A. Usachev; G. V. Chukov20172017, vol.46, no.5



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