期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
［依頼講演］シンチレータと Ga_2O_3 半導体岡田豪; 臼井雄輝; 河野直樹; 河口範明; 柳田健之20172017, vol.117, no.101
ダイヤモンド中の窒素-空孔センターによる高感度センシング技術岩崎孝之; 波多野睦子20172017, vol.117, no.101
XPS による High-k／SiO_2 界面の化学構造およびダイポールの評価藤村信幸; 大田晃生; 池田弥央; 牧原克典; 宮崎誠一20172017, vol.117, no.101
定電圧および定電流印加による Si酸化薄膜の電気抵抗変化特性評価大田晃生; 加藤祐介; 池田弥央; 牧原克典; 宮崎誠一20172017, vol.117, no.101
分極接合基板上 p チャネル GaN MOS 構造の容量特性についての検討高山留美; 星井拓也; 中島昭; 西澤伸一; 大橋弘通; 角嶋邦之; 若林整; 筒井一生20172017, vol.117, no.101
高濃度 SOI 基板と転写法による TMDC FETs の作製川那子高暢; 居駒遼; 高木寛之; 小田俊理20172017, vol.117, no.101
Ge_(1-x)Sn_x ゲートスタック構造における欠陥の物性評価金田裕一; 池進一; 兼松正行; 坂下満男; 竹内和歌奈; 中塚理; 財満鎮明20172017, vol.117, no.101
エピタキシャル Ag（111）上の極薄 IV 族結晶形成伊藤公一; 大田晃生; 黒澤昌志; 洗平昌晃; 池田弥央; 牧原克典; 宮崎誠一20172017, vol.117, no.101
［依頼講演］SOI 技術を用いた量子イメージング検出器の開発－半導体で素粒子·X 線を見る新井康夫20172017, vol.117, no.101
［依頼講演］皮膚アセトン測定に向けた WO_3 ナノ粒子半導体式ガスセンサの研究山田祐樹; 檜山聡; 田畑仁20172017, vol.117, no.101



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