期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopyKenji SHIOJIMA; Takanori HASHIZUME; Masafumi HORIKIRI; Takeshi TANAKA; Tomoyoshi MISHIMA20172017, vol.117, no.333
Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates - Metal workfunction dependence of Schottky barrier heightKenji SHIOJIMA; Hiroyoshi IMADATE; Tomoyoshi MISHIMA20172017, vol.117, no.333
銀ナノ粒子の局在表面プラズモン共鳴による量子ドット増感太陽電池の効率向上に関する研究木幡優弥; 三浦正範; 鹿又健作; 久保田繁; 廣瀬文彦; 有馬ボシールアハンマド20172017, vol.117, no.333
InGaN量子井戸における発光ピークのS字型温度依存性の詳細解析池田優真; 坂井繁太; 大島一輝; 山口敦史; 蟹谷裕也; 冨谷茂隆20172017, vol.117, no.333
マクロステップ上AlGaN量子細線の光学特性早川峰洋; 林佑樹; 長瀬勇樹; 市川修平; 熊本恭介; 柴岡真美; 船戸充; 川上養一20172017, vol.117, no.333
光音響·発光同時計測によるInGaN量子井戸の内部量子効率の測定清水奈緒人; 高橋佑知; 小林玄季; 中納隆; 坂井繁太; 山口敦史; 蟹谷裕也; 冨谷茂降20172017, vol.117, no.333
-c面GaN基板上のGaNのMOVPE成長における酸素低減の研究河野司; 久志本真希; 永松謙太郎; 新田州吾; 本田善央; 天野浩20172017, vol.117, no.333
光電気化学反応を利用した窒化物半導体の低損傷エッチングと電子デバイスへの応用植村圭佑; 松本悟; 渡久地政周; 伊藤圭亮; 佐藤威友20172017, vol.117, no.333
サファイア基板ならびにAlN／サファイアテンプレート上にMOCVD成長したInGaN／GaN MQW太陽電池の特性比較森拓磨; 太田美希; 原田紘希; 加藤慎也; 三好実人; 江川孝志20172017, vol.117, no.333
Eu添加GaNを発光層にした狭帯域赤色垂直微小共振器LEDの実現舘林潤; 稲葉智宏; 塩見圭史; 藤原康文20172017, vol.117, no.333
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