期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
[Invited Talk] STDP Synapse with Outstanding Stability based on a Novel Insulator-to-2D-Metal Transition FETPablo STOLIAR; Alejandro SCHULMAN; Ai KITOH; Akihito SAWA; Isao H. INOUE20172017, vol.117, no.427
Sub-nm EOT Ferroelectric HfO_2 on p~+Ge with Highly Reliable Field Cycling PropertiesX. Tian; L. Xu; S. Shibayama; T. Nishimura; T. Yajima; S. Migita; A. Toriumi20172017, vol.117, no.427
[招待講演]16/14nmノード混載フラッシュメモリに向けた狭いVth分布を持つFinFET Split-Gate MONOSアレイの信頼性及びスケーラピリティ津田是文; 斉藤朋也; 長瀬寛和; 川嶋祥之; 吉冨敦司; 岡西忍; 林倫弘; 丸山卓也; 井上真雄; 村中誠志; 加藤茂樹; 萩原琢也; 齊藤博和; 山口直; 門島勝; 丸山隆弘; 三原竜善; 柳田博史; 園田賢一郎; 山下朋弘; 山口泰男20172017, vol.117, no.427
[招待講演]過渡解析TCADシミュレーションによる強誘電体負性容量FinFETトランジスタの考察太田裕之; 右田真司; 池上努; 服部淳一; 浅井栄大; 福田浩一; 鳥海明20172017, vol.117, no.427
[招待講演]Type-IIエネルギーバンド構造を有する酸化物半導体/(Si, SiGe, Ge)積層型トンネル電界効果トンジスタの提案と動作実証加藤公彦; 松井裕章; 田畑仁; 竹中充; 高木信一20172017, vol.117, no.427
[招待講演]V_(TH) Nearingによる3D-NAND型フラッシュメモリの垂直方向の電荷移動抑制技術溝口恭史; 小滝翔平; 出口慶明; 竹内健20172017, vol.117, no.427



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