期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPEKiattiwut PRASERTSUK; Tomoyuki TANIKAWA; Takeshi KIMURA; Shigeyuki KUBOYA; Tetsuya SUEMITSU; Takashi MATSUOKA20172017, vol.117, no.59
電気化学堆積法によるNiO薄膜の作製古山実季; 市村正也20172017, vol.117, no.59
フレキシブル基板上室内用有機薄膜太陽電池の作製と評価川松祐介; 伊藤瑞起; 加藤慎也; 曽我哲夫; 岸直希20172017, vol.117, no.59
ドロップ光化学堆積法によるn型AlO_x薄膜の作製梅村将成; 市村正也20172017, vol.117, no.59
電気化学堆積法によるCu添加p型Fe-O薄膜半導体の作製小林悟史; 市村正也20172017, vol.117, no.59
多モード干渉を用いた表面プラズモン論理回路の開発渡邊領; 太田雅; 菊地裕大; 平野智裕; 石井佑弥; 福田光男20172017, vol.117, no.59
ボウタイ型金属導波路を用いたプラズモニック保持回路の開発古木崇裕; 太田雅; 石井佑弥; 福田光男20172017, vol.117, no.59
表面プラズモンポラリトンを用いた合分波器および信号反転器の開発中山昂太郎; 住村あさひ; 外岡悠汰; 太田雅; 石井佑弥; 福田光男20172017, vol.117, no.59
GaSb／Si（111）-√3×√3-Ga表面相上へのInGaSb薄膜のヘテロエピタキシャル成長モハマド·モンズール; 森雅之; 下山浩哉; 前澤宏一20172017, vol.117, no.59
水溶液浸漬による4H-SiC（0001）Si面における表面再結合の抑制加藤正史; 市川義人; 市村正也; 木本恒暢20172017, vol.117, no.59
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