期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier LayerA. N. Aleshin; N. V. Zenchenko; D. S. Ponomarev; O. A. Ruban20182018, vol.47, no.2
Field Emission Properties of Nanostructured Silicon Cathode ArraysR. K. Yafarov; S. Yu. Suzdaltsev; V. Ya. Shanygin20182018, vol.47, no.2
Influence of Technological Modes on the Electrophysical Properties of Films of Polyacrylonitrile Doped with Metal ParticlesT. A. Bednaya; S. P. Konovalenko20182018, vol.47, no.2
The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable MemoryV. Ya. Stenin; Yu. V. Katunin20182018, vol.47, no.2
Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier HeightE. A. Kerimov; N. F. Kazymov; S. N. Musaeva20182018, vol.47, no.2
Generation and Concentration of Terahertz Radiation in a Microcavity with an Open Quantum DotA. V. Tsukanov; I. Yu. Kateev20182018, vol.47, no.2
Electrophysical Parameters and Radiation Spectra of Boron Trichloride PlasmaD. B. Murin; A. V. Dunaev20182018, vol.47, no.2
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or AmmoniaA. I. Abdulagatov; Sh. M. Ramazanov; R. S. Dallaev; E. K. Murliev; D. K. Palchaev; M. Kh. Rabadanov; I. M. Abdulagatov20182018, vol.47, no.2