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2018, vol.47, no.7	2018, vol.47, no.8

题名	作者	出版年	年卷期
Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors	N. V. Masalsky	2018	2018, vol.47, no.4
Structuring Copper in the Plasma Medium of a High-Frequency Discharge	A. V. Dunaev; D. B. Murin	2018	2018, vol.47, no.4
Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals	R. K. Yafarov; V. P. Timoshenkov	2018	2018, vol.47, no.4
A Thin-Film Platform for Chemical Gas Sensors	I. V. Roslyakov; K. S. Napolskii; V. S. Stolyarov; E. E. Karpov; A. V. Ivashev; V. N. Surtaev	2018	2018, vol.47, no.4
Features of the Current Flow in Injection Structures Based on PbSnTe:In Films	D. V. Ishchenko; I. G. Neizvestnyi; N. S. Pashchin; V. N. Sherstyakova	2018	2018, vol.47, no.4
Quantum Gates with Spin States in Continuous Microwave Field	A. F. Zinovieva; A. V. Nenashev; A. A. Koshkarev; T. S. Zarodnyuk; A. Yu. Gornov; A. V. Dvurechenskii	2018	2018, vol.47, no.4
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4+ C4F8+ Ar Mixture on the Parameters of Plasma and SiO2/Si Etching Selectivity	A. M. Efremov; D. B. Murin; K.-H. Kwon	2018	2018, vol.47, no.4
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2Plasma	S. A. Pivovarenok	2018	2018, vol.47, no.4